• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films
【24h】

A vapor-phase-assisted growth route for large-scale uniform deposition of MoS2 monolayer films

机译：用于大规模均匀沉积MOS2单层膜的气相辅助生长途径

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work a vapor-phase-assisted approach for the synthesis of monolayer MoS2 is demonstrated, based on the sulfurization of thin MoO3-x precursor films in an H2S atmosphere. We discuss the co-existence of various possible growth mechanisms, involving solid-gas and vapor-gas reactions. Different sequences were applied in order to control the growth mechanism and to obtain monolayer films. These variations include the sample temperature and a time delay for the injection of H2S into the reaction chamber. The optimized combination allows for tuning the process route towards the potentially more favorable vapor-gas reactions, leading to an improved material distribution on the substrate surface. Raman and photoluminescence (PL) spectroscopy confirm the formation of ultrathin MoS2 films on SiO2/Si substrates with a narrow thickness distribution in the monolayer range on length scales of a few millimeters. Best results are achieved in a temperature range of 950-1000 degrees C showing improved uniformity in terms of Raman and PL line shapes. The obtained films exhibit a PL yield similar to mechanically exfoliated monolayer flakes, demonstrating the high optical quality of the prepared layers.
机译：在这作用中，基于H 2 S气氛中的薄MOO3-X前体膜的硫化，证明了用于合成单层MOS2的气相辅助方法。我们讨论各种可能的生长机制的共存，涉及固体气体和蒸气反应。应用不同的序列以控制生长机制并获得单层膜。这些变化包括样品温度和将H2S注入反应室中的时间延迟。优化的组合允许调节朝向可能更有利的蒸汽反应的过程路线，导致基板表面上的改进的材料分布。拉曼和光致发光（PL）光谱证实了在SiO 2 / Si基板上的超薄MOS2膜的形成，在单层范围内具有窄的厚度分布，在几毫米的长度范围内。最佳结果在950-1000摄氏度的温度范围内实现，显示拉曼和PL线形状的改善均匀性。所得薄膜表现出类似于机械剥离的单层薄片的PL产率，证明了制备的层的高光学质量。

著录项

  • 来源
    《RSC Advances》 |2019年第1期|共7页
  • 作者

    Pareek Devendra; Gonzalez Marco A.; Zohrabian Jannik; Sayed Mohamed H.; Steenhoff Volker; Lattyak Colleen; Vehse Martin; Agert Carsten; Parisi Juergen; Schaefer Sascha; Guetay Levent;

  • 作者单位

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    DLR Inst Networked Energy Syst Oldenburg Germany;

    DLR Inst Networked Energy Syst Oldenburg Germany;

    DLR Inst Networked Energy Syst Oldenburg Germany;

    DLR Inst Networked Energy Syst Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

    Carl von Ossietzky Univ Oldenburg Inst Phys Oldenburg Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号