• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >beta-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection
【24h】

beta-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

机译：Beta-Ga2O3纳米槽阵列，具有高光到电子转换，用于太阳能盲深紫外线光电探测

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic beta-Ga2O3 NRAs with an average diameter/length of 500 nm/1.287 mm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on beta-Ga2O3 NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity (R l) of 10.80 mA W-1 and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm(-2), exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.
机译：垂直对准的纳米棒阵列（NRAS），具有有效的光学耦合与入射光和用于光生载流子的快速电子传输，对光电装置引起了很多兴趣。 这里，通过水热和退火方法制备平均直径/ 1.287mm的单斜型β-Ga 2 O 3 NRA。 然后在β-Ga2O3 NRA上图案化圆形Ti / Au电极以制造太阳盲深紫外光探测器。 在零偏置时，该器件显示了10.80mA W-1的光响应性（R L），光响应时间为0.38秒，光强度为1.2 mw cm（-2），呈现自动供电 特征。 本研究提出了一个有希望的候选者，用于太阳盲的深紫外光电检修，具有零功耗。

著录项

  • 来源
    《RSC Advances》 |2019年第11期|共6页
  • 作者

    Wang Shunli; Chen Kai; Zhao Hailin; He Chenran; Wu Chao; Guo Daoyou; Zhao Nie; Ungar Goran; Shen Jingqin; Chu Xulong; Li Peigang; Tang Weihua;

  • 作者单位

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Xiangtan Univ Coll Mat Sci &

    Engn Xiangtan 411105 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Zhejiang Sci Tech Univ Dept Phys Ctr Optoelect Mat &

    Devices Key Lab Opt Field Manipulat Zhejiang Prov Hangzhou 310018 Peoples R China;

    Beijing Univ Posts &

    Telecommun Sch Sci State Key Lab Informat Photon &

    Opt Commun Lab Informat Funct Mat &

    Devices Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun Sch Sci State Key Lab Informat Photon &

    Opt Commun Lab Informat Funct Mat &

    Devices Beijing 100876 Peoples R China;

    Beijing Univ Posts &

    Telecommun Sch Sci State Key Lab Informat Photon &

    Opt Commun Lab Informat Funct Mat &

    Devices Beijing 100876 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号