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首页> 外文期刊>RSC Advances >High-performance inverted organic light-emitting diodes with extremely low efficiency roll-off using solution-processed ZnS quantum dots as the electron injection layer
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High-performance inverted organic light-emitting diodes with extremely low efficiency roll-off using solution-processed ZnS quantum dots as the electron injection layer

机译：高性能倒置有机发光二极管，具有极低效率的滚动，使用溶液处理的ZnS量子点作为电子注入层

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摘要

The electron-injecting layer (EIL) is one of the key factors in inverted organic light-emitting diodes (OLEDs) to realize high electroluminescence efficiency. Here, we proposed a novel cathode-modified EIL based on ZnS quantum dots (QDs) in inverted OLEDs, and demonstrated that the device performance was dramatically improved compared to traditional ZnO EIL. The EIL of ZnS QDs may greatly promote the electron injection ability and consequently increase the charge carrier recombination efficiency for the device. We also investigated the effects of different pH values (ZnS-A, pH = 10; ZnS-B, pH = 12) on the properties of ZnS QDs. The best inverted phosphorescent OLED device employing mCP: Ir(ppy) 3 as the emission layer showed a low turn-on voltage of 2.9 V and maximum current efficiency of 61.5 cd A(-1). Also, the ZnS-A based device exhibits very-low efficiency roll-off of 0.9% and 4.3% at 1000 cd m(-2)D and 5000 cd m-2, respectively. Our results indicate that use of ZnS QDs is a promising strategy to increase the performance in inverted OLEDs.
机译：电子注入层（EIL）是倒有机发光二极管（OLED）中的关键因子之一，以实现高电致发光效率。在这里，我们提出了一种基于倒出的OLED中ZnS量子点（QDS）的新型阴极改性的EIL，并且与传统的ZnO EIL相比，该装置性能显着改善。 ZnS QD的EIL可能大大促进电子注入能力，从而提高器件的电荷载波复合效率。我们还研究了不同pH值（ZnS-A，pH = 10; ZnS-B，pH = 12）对ZnS QD的性质的影响。采用MCP：IR（PPY）3作为发光层的最佳倒磷光OLED器件显示出2.9 V的低通孔电压，最大电流效率为61.5℃（-1）。此外，基于ZnS-A-A的装置在1000cdm（-2）d和5000cd m-2的情况下表现出0.9％和4.3％的非常低的效率滚动。我们的结果表明，使用ZNS QDS是一种有希望的策略，可以提高倒出的OLED中的性能。

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  • 来源
    《RSC Advances》 |2019年第11期|共6页
  • 作者

    Shi Guanjie; Zhang Xiaozheng; Wan Minqiang; Wang Shuanglong; Lian Hong; Xu Run; Zhu Wenqing;

  • 作者单位

    Shanghai Univ Sch Mat Sci &

    Engn Shanghai 200072 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn Shanghai 200072 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn Shanghai 200072 Peoples R China;

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Sch Mechatron Engn &

    Automat Shanghai 200072 Peoples R China;

    Shanghai Univ Minist Educ Key Lab Adv Display &

    Syst Applicat Sch Mechatron Engn &

    Automat Shanghai 200072 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn Shanghai 200072 Peoples R China;

    Shanghai Univ Sch Mat Sci &

    Engn Shanghai 200072 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
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