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首页> 外文期刊>RSC Advances >Vanadium doped few-layer ultrathin MoS2 nanosheets on reduced graphene oxide for high-performance hydrogen evolution reaction
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Vanadium doped few-layer ultrathin MoS2 nanosheets on reduced graphene oxide for high-performance hydrogen evolution reaction

机译：钒掺杂几层超薄MOS2纳米蛋白氧化物，用于高性能氢气进化反应

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摘要

In this paper, we demonstrate a facile solvothermal synthesis of a vanadium(v) doped MoS2-rGO nanocomposites for highly efficient electrochemical hydrogen evolution reaction (HER) at room temperature. The surface morphology, crystallinity and elemental composition of the as-synthesized material have been thoroughly analyzed. Its fascinating morphology propelled us to investigate the electrochemical performance towards the HER. The results show that it exhibits excellent catalytic activity with a low onset potential of 153 mV versus reversible hydrogen electrode (RHE), a small Tafel slope of 71 mV dec(-1), and good stability over 1000 cycles under acidic conditions. The polarization curve after the 1000(th) cycle suggests there has been a decrement of less than 5% in current density with a minor change in onset potential. The synergistic effects of V-doping at S site in MoS2 NSs leading to multiple active sites and effective electron transport route provided by the conductive rGO contribute to the high activity for the hydrogen evolution reaction. The development of a high-performance catalyst may encourage the effective application of the as-synthesized V-doped MoS2-rGO as a promising electrocatalyst for hydrogen production.
机译：在本文中，我们在室温下证明了用于高效电化学氢进化反应（她）的钒（V）掺杂MOS2-RGO纳米复合材料的容易溶剂。已经彻底分析了由合成材料的表面形态，结晶度和元素组成。它的迷人形态推动我们来调查她的电化学性能。结果表明，它表现出优异的催化活性，具有153mV的低发病潜能与可逆氢电极（RHE），小TAFEL斜率为71mV（-1），酸性条件下的良好稳定性超过1000次循环。在1000（Th）循环之后的偏振曲线表明，电流密度的递减小于5％，具有较小的发作电位变化。在导电RGO提供的MOS2 NSS中V型掺杂在MOS2 NSS中的协同作用导致多个活性位点和有效的电子传输路线有助于氢进化反应的高活性。高性能催化剂的开发可以促进有效地应用AS合成的V掺杂MOS2-RGO作为氢气产生的有希望的电催化剂。

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  • 来源
    《RSC Advances》 |2019年第39期|共8页
  • 作者

    Singh Ashwani Kumar; Prasad Jagdees; Azad Udav Pratap; Singh Ashish Kumar; Prakash Rally; Singh Kedar; Srivastava Amit; Alaferdov Andrei A.; Moshkalev Stanislav A.;

  • 作者单位

    Univ Estadual Campinas Ctr Semicond &

    Nanotechnol Components Campinas SP Brazil;

    Jawaharlal Nehru Univ Sch Phys Sci New Delhi India;

    Sch Mat Sci &

    Technol IIT BHU Varanasi Uttar Pradesh India;

    Sch Mat Sci &

    Technol IIT BHU Varanasi Uttar Pradesh India;

    Sch Mat Sci &

    Technol IIT BHU Varanasi Uttar Pradesh India;

    Jawaharlal Nehru Univ Sch Phys Sci New Delhi India;

    VBS Purvanchal Univ TD PG Coll Dept Phys Jaunpur India;

    Univ Estadual Campinas Ctr Semicond &

    Nanotechnol Components Campinas SP Brazil;

    Univ Estadual Campinas Ctr Semicond &

    Nanotechnol Components Campinas SP Brazil;

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  • 正文语种 eng
  • 中图分类 化学;
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