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首页> 外文期刊>RSC Advances >New functional material: spark plasma sintered Si/SiO2 nanoparticles - fabrication and properties
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New functional material: spark plasma sintered Si/SiO2 nanoparticles - fabrication and properties

机译：新功能材料：火花等离子体烧结Si / SiO2纳米颗粒 - 制造和性能

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摘要

A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of 14 nm core Si granules inside an SiO2 shell. Photoluminescence measurements have shown that the emission spectra lie in the energy range of 0.6-1.1 eV, which is not typical of the emissions of the Si/ SiO2 nanostructures reported in numerous papers. This result can be explained by the formation of energy states in the bandgap and the participation of these states in both electronic transport and photoluminescence emission. Annealing of the sample leads to a decrease in defect density, which in turn leads to quenching of the 0.6-1.1 eV photoluminescence. In this case 1.13 eV inter-band transitions in the Si core start to play a dominant role in radiative recombination. Thus, the possibility of controlling the photoluminescence emission over a broad wavelength range was demonstrated.
机译：使用火花等离子体烧结技术制造基于氧化硅纳米粉末的块状纳米结构材料。 结构研究表明，该材料在SiO 2壳体内具有14nm核Si颗粒的组成。 光致发光测量表明，发射光谱位于0.6-1.1eV的能量范围内，这不是许多纸中报道的Si / SiO2纳米结构的排放的典型。 该结果可以通过在带隙中形成能量状态以及这些状态在电子传输和光致发光发射中的参与。 样品的退火导致缺陷密度的降低，这反过来导致淬火0.6-1.1 eV光致发光。 在这种情况下，1.13 Si核心的电源间转变开始在辐射重组中发挥主导作用。 因此，证明了在宽波长范围内控制光致发光发射的可能性。

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  • 来源
    《RSC Advances》 |2019年第29期|共8页
  • 作者

    Dorokhin M. V.; Gavva V. A.; Ved M. V.; Demina P. B.; Kuznetsov Yu M.; Erofeeva I. V.; Nezhdanov A. V.; Boldin M. S.; Lantsev E. A.; Popov A. A.; Trushin V. N.; Vikhrova O. V.; Boryakov A. V.; Yakimov E. B.; Tabachkova N. Yu.;

  • 作者单位

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Russian Acad Sci GG Devyatykh Inst Chem High Pur Subst Tropinina St 49 Nizhnii Novgorod 603951 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Lobachevsky State Univ Nizhny Novgorod Gagarin Ave 23 Nizhnii Novgorod 603950 Russia;

    Russian Acad Sci Inst Microelect Technol &

    High Pur Mat Ac Osipyan St 6 Chernogolovka 142432 Russia;

    Natl Univ Sci &

    Technol MISIS Lenin Ave 4 Moscow 119049 Russia;

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