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Oxygen-vacancy-induced photoelectrochemical water oxidation by platelike tungsten oxide photoanodes prepared under acid-mediated hydrothermal treatment conditions

机译:氧化钨氧化钨光桥氧空位诱导的光电化学水氧化在酸性水热处理条件下

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摘要

Introduction of oxygen vacancies in tungsten oxide photoanodes has been reported as an effective route towards enhancing the solar-driven water oxidation photocurrent. Therefore, it is reasonable to seek facile methods for controlling the number of oxygen vacancies in these photoanodes. Herein, a simple acid-mediated hydrothermal treatment method followed by calcination is utilized to fabricate tungsten oxide photoanodes. It is found that the variation of acid treatment temperature prior to calcination could influence the concentration of oxygen vacancies in the prepared platelike tungsten oxide photoanodes. These defects act as electron donors thus, they result in enhanced photoelectrochemical performance. Using XRD and Raman analyses, an insight is gained into the structure of the samples treated by acid-mediated hydrothermal method. Based on that, a correlation is made between the number of the intercalated water molecules in WO3 center dot nH(2)O (n = 1 or 2) with the formation of oxygen vacancies during the calcination step. This finding is confirmed by XPS and Mott-Schottky analyses. At the optimum acid-mediated hydrothermal treatment temperature (75 degrees C), a photocurrent of 1.06 mA cm(-2) at 1.23 V vs. RHE is obtained. This is six times larger than the photocurrent produced by the sample fabricated at a higher temperature of 175 degrees C. An IPCE of 36.2% is acquired for this sample under irradiation with 350 nm light and at an applied potential of 1.8 V vs. RHE. The IPCE of the optimum sample is three times higher than that of the sample treated at 175 degrees C. This indicates that the mild acid-mediated hydrothermal treatment enhances photocurrent and photoelectrochemical water oxidation performance due to the increased formation of beneficial oxygen vacancy defects.
机译:氧化钨光阳极引入氧空位的缺氧空位被报告为增强太阳能驱动的水氧化光电流的有效途径。因此,可以合理地寻求控制这些光桥中的氧空位数量的体积。这里,利用煅烧的简单酸介导的水热处理方法来制造氧化钨光桥。发现煅烧前的酸处理温度的变化可以影响制备的晶钨氧化物光桥中的氧空位的浓度。这些缺陷作为电子供体,因此它们导致光电化学性能提高。使用XRD和拉曼分析,在酸介导的水热法处理的样品的结构中获得了洞察力。在此基础上,在煅烧步骤期间,在WO3中心点NH(2)O(2)o(n = 1或2)中的插入水分子的数量之间进行相关性在煅烧步骤中形成氧空位。此发现由XPS和Mott-Schottky分析确认。在最佳酸介导的水热处理温度(75℃)中,获得1.23V与rhe的1.06mA cm(-2)的光电流。这比在较高温度为175℃的温度下制造的样品产生的光电流的六倍。在用350nm光照射和1.8V与Rhe的施加电位下,在该样品中获得36.2%的IPCE。最佳样品的IPCE比在175℃处理的样品的三倍高。这表明,由于有益氧空位缺陷的形成增加,温和的酸介导的水热处理增强了光电流和光电化学水氧化性能。

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  • 来源
    《RSC Advances》 |2017年第43期|共9页
  • 作者单位

    Univ Tokyo Sch Engn Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

    Univ Tokyo Sch Engn Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

    Univ Ulsan Dept Civil &

    Environm Engn Daehak Ro 93 Ulsan 680749 South Korea;

    Univ Tokyo Sch Engn Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

    Univ Tokyo Sch Engn Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

    Univ Tokyo Sch Engn Bunkyo Ku 7-3-1 Hongo Tokyo 1138656 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

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