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Investigation on the properties of Ta doped Ti3SiC2 as solid oxide fuel cell interconnects

机译：TA掺杂Ti3SIC2作为固体氧化物燃料电池互连的研究

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摘要

The oxidation behaviours and electrical properties of 5 at% Ta doped Ti3SiC2 solid solution have been investigated at 800 degrees C in air for up to 500 h. The oxidation kinetics of (Ti0.95Ta0.05)(3)SiC2 follows a parabolic law. The oxidation rate constant is 7.33 x 10(-14) g(2) cm(-4) s(-1), which is lower than those of Ti3SiC2, (Ti0.95Nb0.05)(3)SiC2 and Crofer 22 APU. Ta doped r-TiO2 formed (Ti0.95Ta0.05)(3)SiC2 during the oxidation process. Ta doping can limit the outward diffusion of Ti by decreasing the native Ti interstitials concentration and simultaneously restraining the inward diffusion of oxygen by decreasing the O vacancy concentration. As a result, the oxidation resistance is significantly improved and the oxide scale structure of Ti3SiC2 changes from a double-layer to a monolithic layer. The ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation at 800 degrees C in air for 500 h is 29.5 mU cm(2), which is much lower than that of Ti3SiC2. Ta doping can increase the electron concentration in r-TiO2 and thereby increase the electrical conductivity of r-TiO2. Therefore, the ASR of (Ti0.95Ta0.05)(3)SiC2 after oxidation is lower compared to that of Ti3SiC2.
机译：在800℃的空气中在800℃下在800℃下在800℃下在800℃下进行氧化行为和电性能。 （Ti0.95TA0.05）（3）SIC2的氧化动力学遵循抛物线法。氧化速率常数为7.33×10（-14）克（2）cm（-4）s（-1），其低于Ti3sic2，（Ti0.95nb0.05）（3）SiC 2和Creofer 22 APU 。在氧化过程中，Ta掺杂R-TiO 2形成（Ti0.95TA0.05）（3）SiC2。通过降低天然Ti间质浓度并同时通过降低o空位浓度，通过降低氧气的向内扩散来限制Ti的向外扩散。结果，抗氧化性显着改善，Ti3SIC2的氧化物尺度结构从双层变为整体层。在800℃下氧化500h的氧化后的（Ti0.95TA0.05）（3）SiC2的ASR是29.5μm（2），远低于Ti3sic2。 TA掺杂可以增加R-TiO 2中的电子浓度，从而增加R-TiO2的电导率。因此，与Ti3SIC2的氧化后氧化后的（TiO 95TA0.05）（3）SiC 2的ASR较低。

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  • 来源
    《RSC Advances》 |2017年第67期|共7页
  • 作者

    Zheng Lili; Hua Qingsong; Li Xichao; Li Meishuan; Qian Yuhai; Xu Jingjun; Dai Zuoqiang; Chen Tao; Zhang Jianmin; Zhang Hongxin;

  • 作者单位

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Chinese Acad Sci Inst Met Res Shenyang Natl Lab Mat Sci Shenyang 110016 Peoples R China;

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

    Qingdao Univ Coll Mech &

    Elect Engn Power &

    Energy Storage Syst Res Ctr Qingdao 266071 Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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