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首页> 外文期刊>RSC Advances >Facile synthesis of a dopant-free hole transporting material with a phenothiazine core for planar perovskite solar cells
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Facile synthesis of a dopant-free hole transporting material with a phenothiazine core for planar perovskite solar cells

机译：用于平面钙钛矿太阳能电池的吩噻嗪芯的掺杂无掺杂空穴传输材料的容纳合成

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摘要

A novel electron-rich small-molecule, 4,4'-(10-(4-octylphenyl)-10H-phenothiazine-3,7-diyl) bis(N, N-(4-methoxyphenyl) anilene) (PTZ-TPA), containing phenothiazine as the core with triphenylamine side groups, was synthesized via a Suzuki-Miyaura cross-coupling reaction. When PTZ-TPA was incorporated into a CH3NH3PbI3 perovskite solar cell as a dopant-free hole transporting material (HTM), a short circuit photocurrent density of 21.5 mA cm(-2), an open circuit voltage of 0.982 V, and a fill factor of 0.679 were obtained, giving rise to an overall power conversion efficiency of 14.3%, which is comparable to the power conversion efficiency obtained using the current state-of-the-art HTM 2,20,7,70-tetrakis(N, N'-dip-methoxyphenylamine)-9,90-spirobifluorene with dopant (Spiro-MeOTAD, power conversion efficiency of 17.1%). PTZ-TPA is thus a promising HTM with the potential to replace the expensive Spiro-MeOTAD owing to its comparable performance and much simpler synthesis route; it also presented a better stability during a one week aging test compared with Spiro-MeOTAD.
机译：一种新颖的富含电子的小分子，4,4' - （10-（4-辛基苯基）-10H-吩噻嗪-3,7-二基）双（N，N-（4-甲氧基苯基）anilene）（PTZ-TPA ），吩噻嗪含有与三苯基胺侧基的核心，是通过Suzuki-Miyaura交叉偶联反应来合成。当PTZ-TPA被掺入钙钛矿CH3NH3PbI3太阳能电池作为一个自由掺杂物的空穴传输材料（HTM），的21.5毫安厘米（-2），一个0.982Ⅴ的开路电压短路光电流密度，填充系数的0.679得到，产生的14.3％的总功率转换效率，这是与使用的当前状态的最先进的HTM 2,20,7,70四（N，N-得到的功率转换效率“-dip甲氧基苯基胺）-9,90螺二芴与掺杂剂（螺-MeOTAD，17.1％的功率转换效率）。 PTZ-TPA因此，与由于其相当的性能，以取代昂贵的螺-MeOTAD的潜力和更简单的合成路线有前途的HTM;与螺-MeOTAD相比一周老化测试过程中，也提出了更好的稳定性。

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  • 来源
    《RSC Advances》 |2017年第84期|共7页
  • 作者

    Liu Xiaoyuan; Tan Xiao; Chen Qian; Shan Haiquan; Liu Changmei; Xu Jiaju; Chen Zhi-Kuan; Huang Wei; Xu Zong-Xiang;

  • 作者单位

    Nanjing Tech Univ Inst Adv Mat Natl Jiangsu Synerget Innovat Ctr Adv Mat KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ Inst Adv Mat Natl Jiangsu Synerget Innovat Ctr Adv Mat KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    South Univ Sci &

    Technol China Dept Chem Shenzhen Peoples R China;

    South Univ Sci &

    Technol China Dept Chem Shenzhen Peoples R China;

    Nanjing Tech Univ Inst Adv Mat Natl Jiangsu Synerget Innovat Ctr Adv Mat KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    South Univ Sci &

    Technol China Dept Chem Shenzhen Peoples R China;

    Nanjing Tech Univ Inst Adv Mat Natl Jiangsu Synerget Innovat Ctr Adv Mat KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    Nanjing Tech Univ Inst Adv Mat Natl Jiangsu Synerget Innovat Ctr Adv Mat KLOFE 30 South Puzhu Rd Nanjing 211816 Jiangsu Peoples R China;

    South Univ Sci &

    Technol China Dept Chem Shenzhen Peoples R China;

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