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Quantitative measurement of transport properties: Ag-doped nanocrystalline CdS thin films

机译：运输性能的定量测量：Ag掺杂的纳米晶Cds薄膜

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This work highlights the transport properties of undoped and Ag doped nc-CdS thin films for optoelectronic devices. nc-CdS, nc-CdS: Ag 1% and nc-CdS: Ag 5% thin films were prepared by the thermal vacuum evaporation method. X-ray diffraction and scanning electron microscope studies show that the Ag doping affects the structural morphology of the films and the average grain size decreases at low Ag doping concentration whereas it increases at high Ag doping concentration in nc-CdS thin films. We have presented a study for the evaluation of the transport parameters like the drift mobility, recombination lifetime of carriers and mobility-lifetime product of charge carriers. Time-of-flight, steady-state photo-conductivity, and steady-state photocarrier Grating techniques are utilized to measure the mobility, mobility-lifetime product and ambipolar diffusion length of charge carriers. The mobility of electrons (mu(e)) and holes (mu(h)), diffusion length (L) and mobility-lifetime (mu tau)(h) product of holes varied strongly and systematically with grain-size. The mobility-lifetime (ms) e product of majority carriers has been estimated from the temperature dependence of the photoconductivity, which increases with increasing temperature and doping. For nc-CdS: Ag 5%, mu(e), mu(h) increases over two orders of magnitude and (mu tau)(e) increases over an order of magnitude compared to that of nc-CdS. The recombination lifetime of carriers increased significantly in doped and undoped nc-CdS as compared to bulk CdS. We observe that the transport properties increase significantly with higher Ag doping concentration in nc-CdS thin films.
机译：这项工作突出了未掺杂和Ag掺杂NC-CDS薄膜的运输性能，用于光电器件。 NC-CD，NC-CDS：Ag 1％和NC-Cds：Ag 5％薄膜通过热真空蒸发方法制备。 X射线衍射和扫描电子显微镜研究表明，AG掺杂影响薄膜的结构形态，并且在低Ag掺杂浓度下平均晶粒尺寸减小，而在NC-CDS薄膜中以高Ag掺杂浓度增加。我们提出了一种评估运输参数，如漂移移动性，载体的重组寿命和电荷载体的移动寿命产品。使用飞行时间，稳态光电载波和稳态光载波光栅技术来测量电荷载体的移动性，迁移寿命产品和Ambolar扩散长度。电子（穆（e））和孔（mu（h）），扩散长度（l）和迁移寿命（mu tau）（h）孔的迁移率强烈而系统地具有晶粒尺寸而变化。多数载流子的迁移寿命（MS）e产物估计了光电导性的温度依赖性，这随着温度和掺杂的增加而增加。对于NC-CDS：Ag 5％，MU（E），MU（H）在两个数量级和（Mu Tau）（E）与NC-CD相比增加了（Mu Tau）（E）的增加。与批量CD相比，载体的重组寿命在掺杂和未掺杂的NC-CD中显着增加。我们观察到，在NC-CD薄膜中具有更高的Ag掺杂浓度，运输性能显着增加。

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  • 来源
    《RSC Advances》 |2017年第85期|共12页
  • 作者

    Singh Baljinder; Singh Janpreet; Kaur Ramneek; Moudgil R. K.; Tripathi S. K.;

  • 作者单位

    Kurukshetra Univ Dept Phys Kurukshetra 136119 Haryana India;

    Panjab Univ Dept Phys Chandigarh 160014 India;

    Akal Univ Dept Phys Talwandi Sabo 151302 India;

    Kurukshetra Univ Dept Phys Kurukshetra 136119 Haryana India;

    Panjab Univ Dept Phys Chandigarh 160014 India;

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  • 正文语种 eng
  • 中图分类 化学;
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