• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Layer-number dependent and structural defect related optical properties of InSe
【24h】

Layer-number dependent and structural defect related optical properties of InSe

机译：层数依赖性和结构缺陷相关的inse

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Two-dimensional (2D) InSe is an attractive semiconductor because of its bandgap in the near infrared region, high carrier mobility and chemical stability. Here, we present systematic investigations on the layer-dependent optical properties of few-layer InSe (2-6 layers). We develop a quantitative calibration map using optical images and Raman and photoluminescence (PL) spectroscopy to directly identify the layer numbers of the InSe flakes. This is facilitated by the significant difference in the optical contrast or Raman/PL spectra of InSe with different thicknesses. Moreover, excitonic states in few-layer InSe and in the bulk are probed by temperature-dependent PL spectroscopy. An emerging peak arising from the recombination of excitons bound to localized states is observed at low temperature. These states arise from structural defects which can also be induced via electron beam irradiation. The PL emission from bound excitons could be modified to be even stronger than the emission from near band edge recombination. This provides a new strategy to improve the PL emission efficiency of 2D InSe.
机译：二维（2D）内部是一个有吸引力的半导体，因为它在近红外区域的带隙，高载流动性和化学稳定性。在这里，我们对几层内部（2-6层）的层依赖性光学性质提出了系统的研究。我们使用光学图像和拉曼和光致发光（PL）光谱来开发定量校准图，直接识别INSE薄片的层数。这是通过含有不同厚度的内侧光学对比度或拉曼/ Pl光谱的显着差异而促进。此外，通过依赖于温度依赖的PL光谱探测少数层内和块中的泻药状态。在低温下观察到与局部状态结合的激子重组产生的出来峰。这些状态来自结构缺陷，其也可以通过电子束照射引起的。从近频段边缘重组的发射，可以修改来自结合的激子的PL发射。这提供了一种新的策略，可以提高2D INSE的PL发射效率。

著录项

  • 来源
    《RSC Advances》 |2017年第87期|共5页
  • 作者

    Zheng T.; Wu Z. T.; Nan H. Y.; Yu Y. F.; Zafar A.; Yan Z. Z.; Lu J. P.; Ni Z. H.;

  • 作者单位

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

    Southeast Univ Sch Phys Nanjing 211189 Jiangsu Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号