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首页> 外文期刊>RSC Advances >Resistivity and piezoelectric properties of Ca3TaGa1.5Al1.5Si2O14 single crystals for high temperature sensors
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Resistivity and piezoelectric properties of Ca3TaGa1.5Al1.5Si2O14 single crystals for high temperature sensors

机译：CA3TAGA1.5Al1.5A1.5SI2O14用于高温传感器的单晶的电阻率和压电性能

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摘要

High quality colorless Ca3TaGa1.5Al1.5Si2O14 (CTGAS) single crystals are successfully grown by the Czochralski method for high temperature (over 200 degrees C) sensor applications. The full set of properties, including thermal expansion, resistivity, dielectric, elastic and piezoelectric constants, is characterized as a function of temperature for the first time. The thermal expansion of CTGAS is nearly isotropic, which is beneficial to prevent stress and cracking after growth and in various temperature applications. The variation of the dielectric permittivities is about 4% between room temperature and 650 degrees C, while the dielectric loss is less than 2%. In the same temperature range, the piezoelectric coefficient d(11) increases from 4.15 to 5.03 pC N-1 (about 21%). The average temperature coefficient frequency of the (XYt) -30 degrees plate is as small as -15 ppm K-1. Furthermore, the resistivity of CTGAS grown under an low oxygen partial pressure atmosphere is as high as similar to 4 x 10(10) Omega cm at 400 degrees C, which is more than two orders of magnitude better than that of the reference candidate La3Ta0.5Ga5.1Al0.4O14. Altogether, CTGAS exhibits excellent electric and piezoelectric properties at elevated temperatures, and therefore is a promising candidate for high temperature sensor applications.
机译：高质量无色CA3TAGA1.5AL1.5SI2O14（CTGA）单晶由Czochralski方法成功种植，用于高温（超过200摄氏度）传感器应用。包括热膨胀，电阻率，电介质，弹性常数和压电常数的全套性质的特征在于，首次表征为温度的函数。 CTGA的热膨胀是几乎各向同性的，这有利于防止生长和各种温度应用后的应力和裂缝。室温和650℃之间的介电学介电序的变化约为4％，而介电损耗小于2％。在相同的温度范围内，压电系数d（11）从4.15增加到5.03 pc n-1（约21％）。 （XYT）-30度板的平均温度系数频率小于-15ppm k-1。此外，在低氧分压气氛下生长的CTGA的电阻率高于400℃的4×10（10）Ωcm，其比参考候选LA3TA0的数量大于两个数量级。 5GA5.1AL0.4O14。共有CTGA在升高的温度下表现出优异的电气和压电性能，因此是高温传感器应用的有希望的候选者。

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