• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Optics Letters >Lithography-free flexible perfect broadband absorber in visible light based on an all-dielectric multilayer structure
【24h】

Lithography-free flexible perfect broadband absorber in visible light based on an all-dielectric multilayer structure

机译：基于全电介质多层结构的可见光无光柔性完美宽带吸收器

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A flexible broadband absorber based on an all-dielectric multilayer structure is proposed to get an average absorbance of 97.4%, covering the whole visible light. Additionally, such high absorption presents an extraordinary angular tolerance of up to +/- 50 degrees. Due to the single broadband resonance in the highly lossy Fabry-Perot (F-P) cavity and the intrinsic loss property of Ge, the proposed multilayer structure achieves the broadband absorption effect. Furthermore, the simple all-dielectric multilayer configuration requires no noble metal, making the lithography-free, large-scale, cost-effective manufacturing process feasible. Meanwhile, the good substrate adaptation facilitates its preparation on a flexible substrate. Accordingly, a three-dimensional object covered by the proposed flexible absorber can be treated as a two-dimensional black hole, revealing the effect of stealth. The proposed perfect absorber shows potentials for camouflage coating, solar energy collection, flexible optoelectronics, and other fields. (C) 2020 Optical Society of America
机译：吸收剂基于全电介质多层结构的柔性宽带提议得到的97.4％的平均吸光度，覆盖整个可见光。此外，这样高的吸收呈现高达+/- 50度的非凡角度公差。由于高损耗法布里 - 珀罗（F-P）腔中的单个宽带共振和Ge的固有损耗特性，所提出的多层结构实现了宽带吸收效果。此外，简单的全电介质多层配置不需要贵金属，使得自由光刻，大规模，成本有效的制造工艺是可行的。同时，良好底物的适应便于其在柔性基板上制备。因此，由所提出的柔性吸收器覆盖的三维物体可以被视为二维黑洞，揭示隐形的效应。拟议的完美吸收节目潜力伪装涂料，太阳能收集，灵活光电等领域。 （c）2020美国光学学会

著录项

  • 来源
    《Optics Letters》 |2020年第19期|共4页
  • 作者

    Zhao Jiancun; Wang Yan; Zhu Yechuan; Zhang Wei; Yu Yiting;

  • 作者单位

    Northwestern Polytech Univ Shenzhen Res &

    Dev Inst Shenzhen 518057 Peoples R China;

    Northwestern Polytech Univ Shenzhen Res &

    Dev Inst Shenzhen 518057 Peoples R China;

    Xian Technol Univ Shaanxi Prov Key Lab Thin Films Technol &

    Opt Tes Xian 710021 Peoples R China;

    Northwestern Polytech Univ Minist Educ Key Lab Mat Phys &

    Chem Extraordinary Condit Xian 710072 Peoples R China;

    Northwestern Polytech Univ Shenzhen Res &

    Dev Inst Shenzhen 518057 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号