Threshold behavior of optical frequency comb self-generation in an InAs/InGaAs quantum dot laser

Weber Christoph; Columbo Lorenzo L.; Gioannini Mariangela; Breuer Stefan; Bardella Paolo

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Threshold behavior of optical frequency comb self-generation in an InAs/InGaAs quantum dot laser

机译：INAS / INGAAS量子点激光器光学频率梳理自发电的阈值

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We report on a significant reduction of both the radio-frequency beat note line width at 40.7 GHz and the integrated relative intensity noise of a 1 mm long edge-emitting monolithic Fabry-Perot InAs/InGaAs quantum dot semiconductor laser emitting from the ground state at 1250 nm by injection current control. For increasing injection currents, first an unlocked multi-mode behavior is observed and then, at a certain current above lasing threshold, self-locking of the longitudinal modes due to the internal non-linear effects occurs yielding a beat line width of 20 kHz (-3 dB) in contrast to tens of megahertz for lower injection currents. These results are confirmed by simulations. (C) 2019 Optical Society of America

机译：我们报告了40.7GHz的射频搏动Note线宽的显着减少，以及从地态发射的1mm长边发光整体法布里-Cerot Inas / Ingaas量子点半导体激光器的综合相对强度噪声通过喷射电流控制1250nm。为了增加喷射电流，首先观察解锁的多模式行为，然后在上面的某个电流下，由于内部非线性效应，纵向模式的自锁发生，产生20 kHz的节拍线宽（ -3 dB）与较低注射电流的数十兆赫兹对比。这些结果通过模拟确认。（c）2019年光学学会

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来源
《Optics Letters》 |2019年第14期|共4页
作者
Weber Christoph; Columbo Lorenzo L.; Gioannini Mariangela; Breuer Stefan; Bardella Paolo;
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作者单位

Tech Univ Darmstadt Inst Appl Phys Schlossgartenstr 7 D-64289 Darmstadt Germany;

Politecn Torino Dipartimento Elettron &

Telecomunicaz Corso Duca Abruzzi 24 I-10129 Turin Italy;

Politecn Torino Dipartimento Elettron &

Telecomunicaz Corso Duca Abruzzi 24 I-10129 Turin Italy;

Tech Univ Darmstadt Inst Appl Phys Schlossgartenstr 7 D-64289 Darmstadt Germany;

Politecn Torino Dipartimento Elettron &

Telecomunicaz Corso Duca Abruzzi 24 I-10129 Turin Italy;

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正文语种 eng
中图分类计量学;光学;
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1. Threshold behavior of optical frequency comb self-generation in an InAs/InGaAs quantum dot laser [J] . Weber Christoph, Columbo Lorenzo L., Gioannini Mariangela, Optics Letters . 2019,第14期

机译：INAS / INGAAS量子点激光器光学频率梳理自发电的阈值
2. Low threshold current density 1.3μm InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy [J] . F.Y. Chang, J.D. Lee, H.H. Lin Electronics Letters . 2004,第3期

机译：气体源分子束外延生长具有InGaP包覆层的低阈值电流密度1.3μmInAs / InGaAs量子点激光器
3. Ground-state emission and gain in ultralow-threshold InAs-InGaAsquantum-dot lasers [J] . Eliseev P.G., Li H., Liu T., IEEE journal of selected topics in quantum electronics . 2001,第2期

机译：超低阈值InAs-InGaAs量子点激光器的基态发射和增益
4. Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers [C] . Vladimir V. Korenev, Artem V. Savelyev, Alexey E. Zhukov, Conference on Nonlinear Optics and Applications IX . 2015

机译：低散度InAs / InGaAs量子点梳状激光器的波导和有源区结构优化
5. Phase Noise Characterization of a Mode-Locked Quantum-Dot Coherent Optical Frequency Comb Source Laser [D] . Zanette, Kristian. 2017

机译：锁模量子点相干光频梳源激光器的相位噪声特性
6. Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots [O] . Mikhail V Maximov, Natalia V Kryzhanovskaya, Alexey M Nadtochiy, 2014

机译：基于InAs / InGaAs / GaAs量子点的超小型微盘和微环激光器
7. Self-generation of optical frequency comb in single section quantum dot Fabry-Perot lasers: a theoretical study [O] . Bardella, Paolo, Columbo, Lorenzo Luigi, Gioannini, Mariangela 2017

机译：单节量子点法布里-珀罗激光器中光频率梳的自生：理论研究
8. Radiative Characteristics of InAs/InGaAs/InP Quantum Dot Injection Lasers. [R] . Kopchatov, V. I., Zaitsev, S. V., Gordeev, N. Y., 1998

机译：Inas / InGaas / Inp量子点注入激光器的辐射特性。

Threshold behavior of optical frequency comb self-generation in an InAs/InGaAs quantum dot laser

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