High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source

Mishchik Konstantin; Bonamis Guillaume; Qiao Jie; Lopez John; Audouard Eric; Mottay Eric; Honninger Clemens; Manek-Honninger Inka

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High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source

机译：GHz重复速率激光源硅的高效飞秒消融

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We report on silicon ablation with a 20 W GHz amplified femtosecond laser source. This novel laser delivers burst energies up to 400 mu J, providing flexible intra-pulse repetition rates of 0.88 or 3.52 GHz, up to 200 pulses with similar to 350 fs pulse duration. High-efficiency, high-quality ablation can be achieved through optimally determining the number of pulses, intra-pulse repetition, and average pulse energy within a burst. Due to such optimization, we demonstrate a specific ablation rate of 2.5 mm(3)/min /W with a burst containing 200 pulses at 0.88 GHz, which is the highest one reported so far for fs laser ablation, to the best of our knowledge. GHz ablation is sensitive to the selection of laser parameters. We conceptually discuss the contributions of the pulses within a burst to heat-accumulation-based incubation and material ablation. (C) 2019 Optical Society of America

机译：我们报告了20 W GHz扩增的飞秒激光源的硅烧蚀。该新型激光提供高达400 mu j的突发能量，提供0.88或3.52 GHz的柔性脉冲内重复率，高达200个脉冲，具有类似于350 FS脉冲持续时间。通过最佳地确定脉冲内的脉冲数，脉冲中的重复和平均脉冲能量，可以实现高效率，高质量的消融。由于这种优化，我们展示了2.5毫米（3）/ min / W的特定消融率，其中爆发在0.88GHz的0.88 GHz下，这是迄今为止所报告的最高次数，这是我们的知识。 GHz消融对激光参数的选择很敏感。我们在突发到基于蓄热的孵化和物质消融的突发中概念上概念讨论了脉冲的贡献。（c）2019年光学学会

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《Optics Letters》 |2019年第9期|共4页
作者
Mishchik Konstantin; Bonamis Guillaume; Qiao Jie; Lopez John; Audouard Eric; Mottay Eric; Honninger Clemens; Manek-Honninger Inka;
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Amplitude Syst 11 Ave Canteranne F-33600 Pessac France;

Amplitude Syst 11 Ave Canteranne F-33600 Pessac France;

Rochester Inst Technol Chester F Carlson Ctr Imaging Sci 54 Lomb Mem Dr Rochester NY 14623 USA;

Univ Bordeaux CELIA UMR5107 CNRS CEA F-33405 Talence France;

Amplitude Syst 11 Ave Canteranne F-33600 Pessac France;

Amplitude Syst 11 Ave Canteranne F-33600 Pessac France;

Amplitude Syst 11 Ave Canteranne F-33600 Pessac France;

Univ Bordeaux CELIA UMR5107 CNRS CEA F-33405 Talence France;

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正文语种 eng
中图分类计量学;光学;
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1. High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source [J] . Mishchik Konstantin, Bonamis Guillaume, Qiao Jie, Optics Letters . 2019,第9期

机译：GHz重复速率激光源硅的高效飞秒消融
2. All-fiber integrated 10 GHz repetition rate femtosecond laser source based on Raman compression of pulses generated through spectral masking of a phase-modulated diode [J] . B. H. Chapman, A. V. Doronkin, S. V. Popov, Optics Letters . 2012,第15期

机译：基于脉冲调制的全光纤集成式10 GHz重复频率飞秒激光源，该脉冲是通过调相二极管的频谱屏蔽产生的脉冲
3. Experimental Study of the Effect of Pulsewidth on Ablation of Silicon Substrate Using Mega Hertz Repetition Rate Femtosecond Laser [J] . Nitin Sudania Krishnan Venkatakrishnana amp, Bo Tanb* Materials and Manufacturing Processes . 2011,第5期

机译：兆赫兹重复频率飞秒激光对脉宽对硅衬底烧蚀影响的实验研究
4. High-power nonmode-locked femtosecond laser sources at GHz repetition rates [C] . Lilia Pontagnier, Hanyu Ye, Giorgio Santarelli, International Conference Laser Optics . 2020

机译：GHz重复率的大功率非旋偶飞秒激光源
5. Femtosecond pulsed laser ablation and patterning of 3C-silicon carbide films on silicon substrates for MEMS fabrication. [D] . Dong, Yuanyuan. 2004

机译：飞秒脉冲激光烧蚀和硅衬底上用于MEMS制造的3C碳化硅膜的图案化。
6. Characterization of MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces [O] . Manickam Sivakumar, Krishnan Venkatakrishnan, Bo Tan 2011

机译：MHz脉冲重复频率飞秒激光辐照的镀金硅表面的表征
7. Scaling of black silicon processing time by high repetition rate femtosecond lasers [O] . Giorgio Nava, Roberto Osellame, Roberta Ramponi, 2013

机译：高重复率飞秒激光器缩放黑硅处理时间
8. Ultraviolet Femtosecond and Nanosecond Laser Ablation of Silicon: Ablation Efficiency and Laser-Induced Plasma Expansion [R] . Zong, X., Mao, X., Greif, R., 2005

机译：紫外飞秒和纳秒激光烧蚀硅：烧蚀效率和激光诱导等离子体膨胀

High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source

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