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Strategic measurement for the axis orientation and electro-optic coefficient of BaTiO3 crystal thin film grown on MgO crystal with polarization modulations

机译:用偏振调制在MgO晶体中生长的BATIO3晶体薄膜轴取向和电光系数的战略测量

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摘要

BaTiO3 crystal thin film has been investigated to realize electro-optic (EO) devices due to its ultrahigh EO effect, but not much research has been focused on the correct axis orientation and EO coefficient. In this Letter, with a BaTiO3 crystal film grown by pulse laser deposition technique on (100) MgO crystal substrate, an embedded device configuration having the two-step etched waveguide/electrode scheme is designed to reach a high optic-electrical field interaction efficiency, and a 45 degrees outside electric field with an in-plane axis is set to fit the possibility of the a-axis or c-axis orientation of the BaTiO3 crystal film. Then, through a poling process to the sample, the 1 pi, 2 pi, and 3 pi EO modulations of linear polarization are implemented at 4.9, 93, and 11.8 V, respectively, and a decremental voltage period is found. Thereby, a c-axis oriented BaTiO3 crystal film is determined, so that the nonlinear modulation equation is exploited. Finally, with an overlap of 1 pi, 2 pi, and 3 pi modulations, the coherent EO coefficient r(51) and birefringence of 606 pm/V and -0.0215 are obtained, resulting in one (V pi)L-2 value of 68 (V-2 . mm). (C) 2019 Optical Society of America
机译:钛酸钡晶体薄膜已被研究以实现电光(EO)装置由于其超高EO效应,但不是许多研究已经集中在正确轴取向和EO系数。在这种信,与由脉冲激光沉积技术上生长的钛酸钡晶体膜(100)的MgO晶体衬底,具有两步蚀刻波导/电极方案被设计为达到高光学-电场相互作用效率的嵌入式设备的配置,和电场外侧的45度的一个面内轴被设定为适合的BaTiO3晶体膜的a轴或c轴取向的可能性。然后,通过一个极化过程到样品中,直线偏振光的1个PI,2π和3 PI EO调制在4.9,93%,和11.8 V,分别实现,并且一个递减电压期间被发现。由此,c轴取向的BaTiO3晶体膜是确定的,从而使非线性调制方程被利用。最后,用1个PI,2π和3所PI调制,相干EO系数r(51)和606点/ V的双折射和-0.0215获得,导致一个(V PI)的L-2值的重叠68(V-2。毫米)。 (c)2019年光学学会

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  • 来源
    《Optics Letters》 |2019年第17期|共4页
  • 作者单位

    Changchun Univ Sci &

    Technol Sch Sci 7089 Weixing Rd Changchun 130022 Jilin Peoples R China;

    Changchun Univ Sci &

    Technol Sch Sci 7089 Weixing Rd Changchun 130022 Jilin Peoples R China;

    Changchun Univ Sci &

    Technol Sch Sci 7089 Weixing Rd Changchun 130022 Jilin Peoples R China;

    Chinese Acad Sci Inst Microelect Beijing 100019 Peoples R China;

    Chinese Acad Sci Inst Microelect Beijing 100019 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing 100081 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing 100081 Peoples R China;

    Chinese Acad Sci Inst Semicond Beijing 100081 Peoples R China;

    Nanjing Univ Dept Mat Sci &

    Engn Natl Lab Solid State Microstruct Jiangsu Key Lab AF Mat Nanjing 210093 Jiangsu Peoples R China;

    Nanjing Univ Dept Mat Sci &

    Engn Natl Lab Solid State Microstruct Jiangsu Key Lab AF Mat Nanjing 210093 Jiangsu Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
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