Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

Arjunan M. S.; Mondal Anirban; Das Amlan; Adarsh K. V; Manivannan Anbarasu

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Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

机译：生长计数aginsbte相变材料中的多级累积切换过程

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Highly reproducible and precisely controlled gradual variation in optical reflectivity or electrical resistance between amorphous and crystalline phases of phase change (PC) material is a key requirement for multilevel programming. Here we report high-contrast multilevel set and reset operations through accumulative switching in growth-dominated AgInSbTe PC material using a nanosecond laser-based pump-probe technique. The precise tuning of fractions of crystallized or re-amorphized region is achieved by means of controlling the number of irradiated laser pulses enabling six stable multilevels with high-reflectivity contrast of 2% between any two states. Furthermore, Raman spectra of irradiated spots validate the structural changes involved during multilevel switching between amorphous and crystalline phases. (C) 2019 Optical Society of America

机译：相变（PC）材料（PC）材料的无定形和晶相之间的光学反射率或电阻的高度可再现和精确控制的逐渐变化是多级编程的关键要求。在这里，我们通过使用基于纳秒激光的泵浦探头技术通过生长主导的Aginsbte PC材料累积切换报告高对比度多级集和重置操作。通过控制辐照激光脉冲的数量来实现结晶或重叠区域的级分的精确调谐，使得在任何两个状态之间具有2％的高反射率对比度的六个稳定的多尺寸。此外，辐照点的拉曼光谱验证了无定形和结晶相之间的多级切换过程中所涉及的结构变化。（c）2019年光学学会

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来源
《Optics Letters》 |2019年第12期|共4页
作者
Arjunan M. S.; Mondal Anirban; Das Amlan; Adarsh K. V; Manivannan Anbarasu;
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作者单位

Indian Inst Technol Indore Discipline Elect Engn Indore 453552 Madhya Pradesh India;

Indian Inst Sci Educ &

Res Dept Phys Bhopal 462066 Madhya Pradesh India;

Indian Inst Sci Educ &

Res Dept Phys Bhopal 462066 Madhya Pradesh India;

Indian Inst Sci Educ &

Res Dept Phys Bhopal 462066 Madhya Pradesh India;

Indian Inst Technol Madras Dept Elect Engn Chennai 600036 Tamil Nadu India;

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正文语种 eng
中图分类计量学;光学;
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1. Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material [J] . Arjunan M. S., Mondal Anirban, Das Amlan, Optics Letters . 2019,第12期

机译：生长计数aginsbte相变材料中的多级累积切换过程
2. Phase-change recording materials with a growth-dominated crystallization mechanism: A materials overview [J] . L. van Pieterson, M. H. R. Lankhorst, M. van Schijndel, Journal of Applied Physics . 2005,第8期

机译：具有生长控制结晶机制的相变记录材料：材料概述
3. Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices [J] . Krishna Dayal Shukla, Nishant Saxena, Suresh Durai, Scientific reports. . 2016,第1期

机译：重新定义相变内存的速度限制，通过AGINSBTE设备的时间分辨陡峭阈值切换动态显示
4. crystallisation behaviour of phase change materials: comparison between nucleation- and growth-dominated crystallisation [C] . G.F.Zhou, H.J.Borg, J.C.N.Rijpers, Conference on optical data storage . 2000

机译：相变材料的结晶行为：成核和生长为主的结晶之间的比较
5. Study of the Crystallization Dynamics and Threshold Voltage of Phase Change Materials for Use in Reconfigurable RF Switches and Non-volatile Memories. [D] . Xu, Min. 2017

机译：用于可重构RF开关和非易失性存储器的相变材料的结晶动力学和阈值电压的研究。
6. Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices [O] . Krishna Dayal Shukla, Nishant Saxena, Suresh Durai, -1

机译：重新定义AgInSbTe器件的时间分辨陡峭阈值切换动力学揭示的相变存储器的速度极限
7. Redefining the Speed Limit of Phase Change Memory Revealed by Time-resolved Steep Threshold-Switching Dynamics of AgInSbTe Devices [O] . Krishna Dayal Shukla, Nishant Saxena, Suresh Durai, 2016

机译：重新定义相变内存的速度限制，通过AGINSBTE设备的时间分辨陡峭阈值切换动态显示

Multilevel accumulative switching processes in growth-dominated AgInSbTe phase change material

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