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首页> 外文期刊>Optics Letters >High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer
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High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized beta-Ga2O3 layer

机译：高性能纳米孔 - GaN金属 - 绝缘体 - 半导体紫外线光电探测器，具有热氧化β-GA2O3层

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摘要

We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized beta-Ga2O3 insulating layer. The devices show a high responsivity of 4.5 x 10(5) A/W and maximum external quantum efficiency of 1.55 x 10(8)% at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of 8.27 x 10(15) Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The NP-GaN/beta-Ga2O3 MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process. (C) 2019 Optical Society of America
机译：我们用热氧化的β-Ga2O3绝缘层报告高性能纳米孔（NP）GaN基金属 - 半导体（MIS）紫外（UV）光电探测器（PDS）。 该装置在10 V施加的偏压下显示出4.5×10（5）A / W和1.55×10（8）％的最大外部量子效率为1.55×10（8）％，归因于陷阱辅助隧道诱导的内部 获得机制。 相应地，在我们的制造PDS中也观察到特定探测器8.27×10（15）琼松和优异的光学切换重复性。 由于高性能和简单的制造工艺，NP-GaN / Beta-Ga 2 O 3 MIS UV PD可以作为UV光检测应用的优异候选者。 （c）2019年光学学会

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  • 来源
    《Optics Letters》 |2019年第9期|共4页
  • 作者

    Meng Ruilin; Ji Xiaoli; Lou Zheng; Yang Jiankun; Zhang Yonghui; Zhang Zihui; Bi Wengang; Wang Junxi; Wei Tongbo;

  • 作者单位

    Hebei Univ Technol Sch Elect &

    Informat Engn Key Lab Elect Mat &

    Devices Tianjin Tianjin 300401 Peoples R China;

    Chinese Acad Sci Semicond Lighting R&

    D Ctr Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond State Key Lab Superlattices &

    Microstruct Beijing 100083 Peoples R China;

    Chinese Acad Sci Semicond Lighting R&

    D Ctr Inst Semicond Beijing 100083 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Key Lab Elect Mat &

    Devices Tianjin Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Key Lab Elect Mat &

    Devices Tianjin Tianjin 300401 Peoples R China;

    Hebei Univ Technol Sch Elect &

    Informat Engn Key Lab Elect Mat &

    Devices Tianjin Tianjin 300401 Peoples R China;

    Chinese Acad Sci Semicond Lighting R&

    D Ctr Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Semicond Lighting R&

    D Ctr Inst Semicond Beijing 100083 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
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