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Soliton microcomb generation at 2 mu m in z-cut lithium niobate microring resonators

机译：在Z-Cut锂铌酸锂微管谐振器中2μm的孤子微离孔

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摘要

Chip-based soliton frequency combs have been demonstrated on various material platforms, offering broadband, mutually coherent, and equally spaced frequency lines desired for many applications. Lithium niobate (LN), possessing both second- and third-order optical nonlinearities, as well as integrability on insulating substrates, has emerged as a novel source for microcomb generation and controlling. Here we demonstrate mode-locked soliton microcombs generated around 2 mu m in a high- Q z-cut LN microring resonator. The intracavity photorefractive effect is found to be still dominant over the thermal effect in the 2 mu m region, which facilitates direct accessing soliton states in the red-detuned regime, as reported in the telecom band. We also find that intracavity stimulated Raman scattering is greatly suppressed when moving the pump wavelength from the telecom band to 2 mu m, thus alleviating Raman-Kerr comb competition. This Letter expands mode-locked LN microcombs to 2 mu m, and could enable a variety of potential applications based on LN nanophotonic platform. (C) 2019 Optical Society of America
机译：已经在各种材料平台上证明了基于芯片的孤子频率梳理，提供了许多应用所需的宽带，相互连贯的和同等间隔的频率线。铌酸锂（LN），同时具有二阶和三阶非线性光学，以及对绝缘基板积性，已成为一个新的源，用于产生microcomb和控制。在这里，我们展示了在高Q Z-CUT LN微管谐振器中大约2μm产生的锁定孤子微囊体。在电信带中报道，腔内光焦效应仍然占据了2μm地区的热效应中的热效应仍然显着。我们还发现，当将泵波长从电信带移动到2μm时，极大地抑制了腔内刺激的拉曼散射，从而减轻了拉曼-Kerr梳竞争。这封信将模式锁定的LN小微囊体扩展到2​​μm，并且可以实现基于LN纳米光电平台的各种潜在应用。 （c）2019年光学学会

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  • 来源
    《Optics Letters》 |2019年第12期|共4页
  • 作者

    Gong Zheng; Liu Xianwen; Xu Yuntao; Xu Mingrui; Surya Joshua B.; Lu Juanjuan; Bruch Alexander; Zou Changling; Tang Hong X.;

  • 作者单位

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

    Univ Sci &

    Technol China Key Lab Quantum Informat CAS Hefei 230026 Anhui Peoples R China;

    Yale Univ Dept Elect Engn New Haven CT 06511 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
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