Silicon-on-insulator free-carrier injection modulators for the mid-infrared

Nedeljkovic M.; Littlejohns C. G.; Khokhar A. Z.; Banakar M.; Cao W.; Penades J. Soler; Tran D. T.; Gardes F. Y.; Thomson D. J.; Reed G. T.; Wang H.; Mashanovich G. Z.

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Silicon-on-insulator free-carrier injection modulators for the mid-infrared

机译：绝缘体上的绝缘体自由载体注入调制器用于中红外线

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Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 mu m are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electmabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach-Zehnder interferometer, achieving a V pi L pi of 0.052 V. mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.

机译：呈现在3.8μm的绝缘体上硅的绝缘体波导的自由载波效果调节剂的实验示范。 PIN二极管用于将载体注入波导，并且配置为（a）使用自由载体推荐，以产生具有34dB调制深度的可变光学衰减器，并且（b）使用自由载体电火液与引脚二极管用作相位的引脚二极管 Mach-Zehnder干涉仪中的转换器，实现0.052 V mm的V pi l pi和22 dB的直流调制深度。调制以高达125 Mbit / s的数据速率证明。光学社会在创意公约归因4.0许可的条款下发表。

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来源
《Optics Letters》 |2019年第4期|共4页
作者
Nedeljkovic M.; Littlejohns C. G.; Khokhar A. Z.; Banakar M.; Cao W.; Penades J. Soler; Tran D. T.; Gardes F. Y.; Thomson D. J.; Reed G. T.; Wang H.; Mashanovich G. Z.;
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Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

Nanyang Technol Univ Silicon Technol Ctr Excellence Singapore 639798 Singapore;

Univ Southampton Optoelect Res Ctr Southampton SO17 1BJ Hants England;

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正文语种 eng
中图分类计量学;光学;
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专利

1. Silicon-on-insulator free-carrier injection modulators for the mid-infrared [J] . Nedeljkovic M., Littlejohns C. G., Khokhar A. Z., Optics Letters . 2019,第4期

机译：绝缘体上的绝缘体自由载体注入调制器用于中红外线
2. A proposal for digital electro-optic switches with free-carrier dispersion effect and Goos-Hanchen shift in silicon-on-insulator waveguide corner mirror [J] . DeGui Sun Journal of Applied Physics . 2013,第10期

机译：绝缘体上硅波导角镜中具有自由载流子色散效应和Goos-Hanchen位移的数字电光开关的建议
3. Effects of heat induced by two-photon absorption and free-carrier absorption in silicon-on-insulator nanowaveguides operating as all-optical wavelength converters [J] . Siamak Abdollahi, Mohammad Kazem Moravvej-Farshi Applied optics . 2009,第13期

机译：在作为全光波长转换器的绝缘体上硅纳米波导中，由双光子吸收和自由载流子吸收引起的热量的影响
4. Free-carrier electro-absorption and electro-refraction modulation in group IV materials at mid-infrared wavelengths [C] . Milos Nedeljkovic, Goran Z. Mashanovich Silicon photonics VII. . 2012

机译：IV组材料在中红外波长下的自由载流子电吸收和电折射调制
5. Free-carrier effects in polycrystalline silicon-on-insulator photonic devices. [D] . Ogah, Oshoriamhe F. 2010

机译：绝缘体上多晶硅光子器件中的自由载流子效应。
6. A silicon-on-insulator polarization diversity scheme in the mid-infrared [O] . Jing Wang, Chunghun Lee, Ben Niu, -1

机译：中红外的绝缘体上硅极化分集方案
7. Silicon-on-insulator free-carrier injection modulators for the mid-infrared [O] . M. Nedeljkovic, C. G. Littlejohns, A. Z. Khokhar, 2019

机译：绝缘体上的绝缘体自由载体注入调制器用于中红外线
8. Optically Induced Free-Carrier Light Modulator [R] . Gruber, C., Richards, W. E. 1968

机译：光学自由载流子光调制器

Silicon-on-insulator free-carrier injection modulators for the mid-infrared

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