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nBn extended short-wavelength infrared focal plane array

机译：NBN扩展短波长红外焦平面阵列

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摘要

An extended short-wavelength nBn InAs/GaSb/AlSb type-II superlattice-based infrared focal plane array imager was demonstrated. A newly developed InAs0.10Sb0.90/GaSb superlattice design was used as the large-bandgap electron barrier in this photodetector. The large band gap electron-barrier design in this nBn photodetector architecture leads to the device having lower dark current densities. A new bi-layer etch-stop scheme using a combination of InAs0.91Sb0.09 bulk and AlAs0.1Sb0.9/GaSb superlattice layers was introduced to allow complete substrate removal and a shorter wavelength cut-on. Test pixels exhibit 100% cutoff wavelengths of similar to 2.30 and similar to 2.48 mu m at 150 and 300 K, respectively. The devices achieve saturated quantum efficiency values of 59.7% and 63.8% at 150 and 300 K, respectively, under backside illumination and without any antireflection coating. At 150 K, photodetectors exhibit dark current density of 8.75 x 10(-8) A/cm(2) under -400 mV applied bias, providing specific detectivity of 2.82 x 10(12) cm . Hz(1/2)/W at 1.78 mu m. At 300 K, the dark current density reaches 4.75 x 10(-2) A/cm(2) under -200 mV bias, providing a specific detectivity of 8.55 x 109 cm . Hz(1/2)/W 1.78 mu m. (C) 2018 Optical Society of America
机译：演示了扩展的短波长波长NBN INAS / GASB / ALSB Type-II超晶格的基于外焦焦平面阵列成像器。新开发的INAS0.10SB0.90 / GASB超晶格设计用作该光电探测器中的大带隙电子屏障。该NBN光电检测器架构中的大带隙电子屏障设计导致具有较低暗电流密度的装置。使用INAS0.91SB0.09体积和ALAS0.1SB0.9 / GASB超晶格层的组合的新型双层蚀刻方案进行了引入，以允许完整的基板去除和较短的波长切断。测试像素分别表现出100％的截止波长，类似于2.30，类似于150和300k的2.48μm。该器件在背面照明下分别在150和300k下实现59.7％和63.8％的饱和量子效率值，并且没有任何抗反射涂层。在150 K，光电检测器表现出的暗电流密度8.75×10（-8）A /厘米（2）根据-400毫伏施加的偏压，从而提供2.82×10（12）厘米比探测。 Hz（1/2）/ w为1.78 mu m。在300 k下，暗电流密度达到4.75×10（2）A / cm（2），在-200mV偏压下，提供8.55×109cm的特定检测率。 Hz（1/2）/ w 1.78 mu m。 （c）2018年光学学会

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  • 来源
    《Optics Letters》 |2018年第3期|共4页
  • 作者

    Dehzangi Arash; Haddadi Abbas; Chevallier Romain; Zhang Yiyun; Razeghi Manijeh;

  • 作者单位

    Northwestern Univ Dept Elect Engn &

    Comp Sci Ctr Quantum Devices Evanston IL 60208 USA;

    Northwestern Univ Dept Elect Engn &

    Comp Sci Ctr Quantum Devices Evanston IL 60208 USA;

    Northwestern Univ Dept Elect Engn &

    Comp Sci Ctr Quantum Devices Evanston IL 60208 USA;

    Northwestern Univ Dept Elect Engn &

    Comp Sci Ctr Quantum Devices Evanston IL 60208 USA;

    Northwestern Univ Dept Elect Engn &

    Comp Sci Ctr Quantum Devices Evanston IL 60208 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
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