Optically pumped lasing at 3 mu m from compositionally graded GeSn with tin up to 22.3%

Dou Wei; Zhou Yiyin; Margetis Joe; Ghetmiri Seyed Amir; Al-Kabi Sattar; Du Wei; Liu Jifeng; Sun Greg; Soref Richard A.; Tolle John; Li Baohua; Mortazavi Mansour; Yu Shui-Qing

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Optically pumped lasing at 3 mu m from compositionally graded GeSn with tin up to 22.3%

机译：在3μm的光学泵浦在3μm，锡的合成渐变的Gesn，锡高达22.3％

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The recent demonstration of the GeSn laser opened a promising route towards the monolithic integration of light sources on the Si platform. A GeSn laser with higher Sn content is highly desirable to enhance the emission efficiency and to cover longer wavelength. This Letter reports optically pumped edge-emitting GeSn lasers operating at 3 mu m, whose device structure featured Sn compositionally graded with a maximum Sn content of 223%. By using a 1950-nm laser pumping in comparison with a 1064-nm pumping, the local heating and quantum defect were effectively reduced, which improved laser performance in terms of higher maximum lasing temperature and lower threshold. (C) 2018 Optical Society of America

机译：最近的GESN激光器的演示开启了朝着SI平台上的光源整合的有希望的路线。具有较高SN含量的GESN激光非常希望能够提高发光效率并覆盖更长的波长。这封信报告了光学泵浦的边缘发射GESN激光器，在3μm下工作，其器件结构特征在于SN合成的分级，最大SN含量为223％。通过使用1950-nm激光泵送与1064-nm泵送相比，有效地减少了局部加热和量子缺陷，这在更高的最大激光温度和更低的阈值方面提高了激光性能。（c）2018年光学学会

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来源
《Optics Letters》 |2018年第19期|共4页
作者
Dou Wei; Zhou Yiyin; Margetis Joe; Ghetmiri Seyed Amir; Al-Kabi Sattar; Du Wei; Liu Jifeng; Sun Greg; Soref Richard A.; Tolle John; Li Baohua; Mortazavi Mansour; Yu Shui-Qing;
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Univ Arkansas Dept Elect Engn Fayetteville AR 72701 USA;

Univ Arkansas Dept Elect Engn Fayetteville AR 72701 USA;

ASM 3440 East Univ Dr Phoenix AZ 85034 USA;

Univ Arkansas Pine Bluff Dept Chem &

Phys Pine Bluff AR 71601 USA;

Univ Arkansas Dept Elect Engn Fayetteville AR 72701 USA;

Wilkes Univ Dept Elect Engn Wilkes Barre PA 18766 USA;

Dartmouth Coll Thayer Sch Engn Hanover NH 03755 USA;

Univ Massachusetts Boston Dept Engn Boston MA 02125 USA;

Univ Massachusetts Boston Dept Engn Boston MA 02125 USA;

ASM 3440 East Univ Dr Phoenix AZ 85034 USA;

Arktonics LLC 1339 South Pinnacle Dr Fayetteville AR 72701 USA;

Univ Arkansas Pine Bluff Dept Chem &

Phys Pine Bluff AR 71601 USA;

Univ Arkansas Dept Elect Engn Fayetteville AR 72701 USA;

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正文语种 eng
中图分类计量学;光学;
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1. Optically pumped lasing at 3 mu m from compositionally graded GeSn with tin up to 22.3% [J] . Dou Wei, Zhou Yiyin, Margetis Joe, Optics Letters . 2018,第19期

机译：在3μm的光学泵浦在3μm，锡的合成渐变的Gesn，锡高达22.3％
2. Optical pumped lasing in solution processed perovskite semiconducting materials: Self-assembled microdisk lasing [J] . Sasaki Fumio, Mochizuki Hiroyuki, Zhou Ying, Japanese journal of applied physics . 2016,第4s期

机译：固溶钙钛矿半导体材料中的光泵浦激光：自组装微盘激光
3. Manifestations of nonlinear optical effects in a novel SRS-active crystal - natural topaz, Al_2(F_(1-x)(OH)_x)_2SiO_4: many-phonon Χ~(3)-lasing, more than sesqui-octave Stokes and anti-Stokes multi-wavelength comb lasing, cascaded and cross-cascaded Χ~(3) <-> Χ~(3) Raman-induced interactions under single-and dual-wavelength picosecond collinear coherent pumping, THG and combined SRS-promoting phonon modes [J] . A. A. Kaminskii, O. Lux, H. Rhee, Laser physics letters . 2013,第7期

机译：新型SRS活性晶体-天然黄玉Al_2（F_（1-x）（OH）_x）_2SiO_4的非线性光学效应的表现：多声子Χ〜（3）激光，比倍半倍频程斯托克斯和反-斯托克斯多波长梳状激射，级联和交叉级联的X〜（3）<-> X〜（3）在单波长和双波长皮秒共线相干泵浦，THG和SRS促进声子组合模式下的拉曼诱导相互作用
4. Lasing of optically pumped GeSn micro-structures grown on step-graded GeSn buffers [C] . V. Reboud, A. Gassenq, N. Pauc, International Conference on Group IV Photonics . 2017

机译：激光在逐步分级的GeSn缓冲液上生长的光抽运GeSn微观结构
5. Optical investigations of InGaN heterostructures and GeSn nanocrystals for photonic and phononic applications: light emitting diodes and phonon cavities. [D] . Hafiz, Shopan din Ahmad. 2016

机译：用于光子和声子应用的InGaN异质结构和GeSn纳米晶体的光学研究：发光二极管和声子腔。
6. 2nd-order random lasing in a multimode diode-pumped graded-index fiber [O] . Ekaterina A. Evmenova, Alexey G. Kuznetsov, Ilya N. Nemov, -1

机译：多模二极管泵浦渐变折射率光纤中的二阶随机激射
7. Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K [O] . Reboud, V., Gassenq, A., Pauc, N., 2017

机译：光学泵浦的Gesn微型磁盘，具有16％的sn激光，在3.1微米到达 180K

Optically pumped lasing at 3 mu m from compositionally graded GeSn with tin up to 22.3%

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