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首页> 外文期刊>Optics Letters >Efficient postprocessing technique for fabricating surface nanoscale axial photonics microresonators with subangstrom precision by femtosecond laser
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Efficient postprocessing technique for fabricating surface nanoscale axial photonics microresonators with subangstrom precision by femtosecond laser

机译:用Femtosecond激光用薄壁精度制造表面纳米级轴向光子微生物器的高效性能技术

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摘要

We demonstrated the subangstrom precise correction of surface nanoscale axial photonics (SNAP) micro-resonators by the femtosecond (fs) laser postprocessing technique for the first time. The internal stress can be induced by fs laser inscriptions in the fiber, causing nanoscale effective radius variation (ERV). However, the obtained ultraprecise fabrication usually undergoes multiple tries. Here, we propose a novel postprocessing technique based on the fs laser that significantly reduces the ERV errors and improves the fabrication precision without iterative corrections. The postexposure process is achieved at the original exposure locations using lower pulse energy than that in the initial fabrication process. The results show that the ERV is nearly proportional to the pulse energy of the postexposure process. The slope of the ERV versus the pulse energy is 0.07 a/nJ. The maximum of the postprocessed ERV can reach 8.0 . The repeatability was experimentally verified by accomplishing the correction on three SNAP microresonators with the precision of 0.75 . The developed fabrication technique with fs laser enables SNAP microresonators with new breakthrough applications for optomechanics and filters. (C) 2018 Optical Society of America
机译:我们通过飞秒首次(FS)激光后处理技术证实表面的纳米级的轴向光子(SNAP)的微谐振器的subangstrom精确校正。的内部应力可以通过飞秒激光铭文在纤维被诱导,导致纳米级有效半径的变化(ERV)。然而,所获得的超精密加工通常经历多次尝试。在这里,我们提出了基于飞秒激光的是显著降低ERV错误并改进而不迭代修正的制造精度的新颖的后处理技术。曝光后工艺是在使用较低的脉冲能量比在初始制造过程中的原始曝光位置而实现。结果表明,该ERV几乎是成正比的暴露后处理的脉冲能量。的ERV与脉冲能量的斜率是0.07 / N.J。经后处理的ERV的最高可以达到8.0。重复性进行了实验用的0.75的精度实现三个SNAP微谐振器校正验证。用飞秒激光的发达的制造技术使SNAP微谐振器与光机械和过滤器新的突破应用。 (c)2018年光学学会

著录项

  • 来源
    《Optics Letters》 |2018年第23期|共4页
  • 作者单位

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

    Aston Univ Aston Inst Photon Technol Birmingham B4 7ET W Midlands England;

    Huazhong Univ Sci &

    Technol Wuhan Natl Lab Optoelect Wuhan 430074 Hubei Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 计量学;光学;
  • 关键词

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