首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Design and analysis of an electrically pumped GaAs quantum dot plasmonic nanolaser
【24h】

Design and analysis of an electrically pumped GaAs quantum dot plasmonic nanolaser

机译:电泵浦GaAs量子点等离子体纳糖瘤的设计与分析

获取原文
获取原文并翻译 | 示例
           

摘要

Recently, there is increasing attention to electrically pumped room temperature sub-wavelength plasmon sources because of their various potential applications mainly in the integrated plasmonic field. In this paper, a GaAs/AlGaAs quantum-dot based waveguide integrated plasmonic nanolaser is introduced and theoretically investigated. Using a semi-classical rate equation model, the performance of our nanolaser is studied and its characteristics are presented in detail. The proposed nanolaser has a tiny footprint of 0.068 mu m(2), room temperature operating condition and monolithic process while having remarkable output performance. The new structure generates 1mW output power with a 23.6 mA injection current. The threshold pump current of this device is calculated to be about 4.7 mA and at this current level output power is about 198 mu W. Also, the proposed device provides a wide spectral bandwidth of about 541 GHz in the threshold pumping rate. The compact cavity design provides significant mode confinement and considerable overlap between the lasing mode and the gain medium. This structure provides a Q factor about 30 and Purcell factor about 66.
机译:最近,由于它们的各种潜在应用主要在集成的等离子体场中,增加了电泵的室温子波长等离子体来源。在本文中,引入了GaAs / Algaas量子点基的波导集成等离子体纳米解波纳糖区和理论上研究。使用半古典速率等式模型,研究了我们的纳米糖的性能,并详细介绍了其特性。所提出的纳米锥度具有0.068μm(2),室温操作条件和单片过程的微小占地面积,同时具有显着的输出性能。新结构采用23.6 mA喷射电流产生1MW输出功率。该装置的阈值泵电流计算为约4.7mA,并且在该电流水平输出功率下为约198μmW。此外,所提出的装置在阈值泵送速率下提供大约541GHz的宽频带宽。紧凑型腔设计在激光模式和增益介质之间提供了显着的模式限制和相当大的重叠。该结构提供Q因子约30和purcell系数约66。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号