A {112}X3 grain boundary generated from the decomposition of a 29 grain boundary in multicrystalline silicon during directional solidification

Lu-Chung Chuang; Kensaku Maeda; Keiji Shiga

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A {112}X3 grain boundary generated from the decomposition of a 29 grain boundary in multicrystalline silicon during directional solidification

机译：从定向凝固期间从多晶硅硅中的29晶界分解产生的{112} x3晶界

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摘要

The generation of a {112}∑3 grain boundary (GB) was observed in situ from the decomposition of a 29 GB during directional solidification of multicrystalline Si. A faceted groove formed at the junction of the solid/melt interface and the {112}∑3 GB. This mechanism is different from that for the growth of {111}∑3 GBs, for which no groove formed at the interface. If the growth rates for the adjacent facets of the groove are the same, the GB can grow in a straight manner along the {112} plane. The present results suggest that kinetics can give rise to high-energy GBs during solidification.

机译：在多晶硅Si的定向凝固期间，原位观察到{112}σ3晶界（GB）的产生。形成在固体/熔体界面的结处的刻面槽和{112}σ3gb。该机制与{111}Σ3GB的生长不同，因为界面没有形成凹槽。如果凹槽的相邻方面的生长速率相同，则GB可以沿{112}平面以直的方式生长。本结果表明动力学在凝固过程中可以引起高能量GB。

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《Scripta materialia》 |2019年第2019期|共5页
作者
Lu-Chung Chuang; Kensaku Maeda; Keiji Shiga;
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作者单位

Institute for Materials Research (MR) Tohoku University. Katahira 2-1-1 Aoba-ku Sendai 980-8577 Japan;

Institute for Materials Research (MR) Tohoku University. Katahira 2-1-1 Aoba-ku Sendai 980-8577 Japan;

Institute for Materials Research (MR) Tohoku University. Katahira 2-1-1 Aoba-ku Sendai 980-8577 Japan;

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正文语种 eng
中图分类冶金工业;
关键词
Grain boundary; Multicrystalline Si; Directional solidification;

机译：晶界;多晶硅;定向凝固;

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专利

1. A {112}X3 grain boundary generated from the decomposition of a 29 grain boundary in multicrystalline silicon during directional solidification [J] . Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga Scripta materialia . 2019,第期

机译：从定向凝固期间从多晶硅硅中的29晶界分解产生的{112} x3晶界
2. TEM characterization of near sub-grain boundary dislocations in directionally solidified multicrystalline silicon [J] . Kivambe M., Stokkan G., Ervik T., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Null期

机译：定向凝固多晶硅近亚晶边界脱位的TEM表征
3. Large-and small-angle grain boundaries in multicrystalline silicon and implications for the evolution of grain boundaries during crystal growth [J] . Eva-Regine Carl, Andreas Danilewsky, Elke Meissner, Journal of Applied Crystallography . 2014,第6期

机译：多晶硅中的大角度和小角度晶界及其对晶体生长过程中晶界演变的影响
4. (66-0027)A {112}Σ3 boundary grown from the decomposition of a Σ9 boundary during directional solidification of multicrystalline siliconv荘履中東北大金研 [C] . 前田健作, 志賀敬次, 森戸春彦, 日本金属学会春期大会 . 2019

机译：（66-0027）{112}σ3从Σ9边界的分解过程中的多晶硅硅的定向凝固过程中生长的边界荘荘中东部大金属
5. Grain boundary dynamics during directional solidification of multicrystalline silicon [D] . Chuang Lu-Chung 2019

机译：多晶硅定向凝固过程中的晶界动力学
6. Directional grain growth from anisotropic kinetic roughening of grain boundaries in sheared colloidal crystals [O] . Shreyas Gokhale, K. Hima Nagamanasa, V. Santhosh, 2012

机译：剪切胶态晶体中晶界的各向异性动力学粗化引起的定向晶粒生长
7. Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography [O] . Lotharukpong, C., Tweddle, D., Martin, T. L., 2018

机译：使用原子探针层析成像技术对多晶硅中晶界和孤立位错进行元素表征的样品制备方法

A {112}X3 grain boundary generated from the decomposition of a 29 grain boundary in multicrystalline silicon during directional solidification

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