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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Piezo-phototronic effect-modulated carrier transport behavior in different regions of a Si/CdS heterojunction photodetector under a Vis-NIR waveband
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Piezo-phototronic effect-modulated carrier transport behavior in different regions of a Si/CdS heterojunction photodetector under a Vis-NIR waveband

机译：在VIR-NIR波段下SI / CDS异质结光电探测器的不同区域中的压电反应效应调制载波运输行为

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The piezo-phototronic effect, as a three-way coupling effect of piezoelectricity, semiconductor and optical excitation in piezoelectric semiconductors to improve the performance of optoelectronic devices, has a wide range of applications in various fields. However, under different light illumination conditions, the piezo-phototronic effect would have different effects on the optoelectronic performance due to the different photo-generated carrier excitation regions. Here, the piezo-phototronic effect is utilized to modulate the carrier transport behavior of a p-Si/n-CdS heterojunction PD during the optoelectronic process in a broadband range from visible to near-infrared light. The strain-induced piezo-charges significantly improve the photoresponse performance of the heterojunction PD. The photoresponsivity increases by 1867% under -0.35 parts per thousand strain under 808 nm light illumination, with a remarkable reduction in the rise and fall times to similar to 2.1 ms (reduced by 83.3% and 50.0%, respectively). However, since the photogenerated carriers are produced only at the n-CdS side under 442 nm light illumination, the photoresponse performance is greatly weakened by the piezo-phototronic effect. The corresponding working mechanism of the piezo-phototronic effect on the heterojunction photodiode under different light illumination conditions is proposed in detail. These results provide an in-depth understanding about the piezo-phototronic effect, which would enable more efficient utilization of the piezo-phototronic effect in optoelectronic devices.
机译：压电phototronic效果，作为压电性，半导体和压电半导体光学激发的三路耦合效应，以改善光电器件的性能，具有宽范围的在各个领域的应用。然而，不同的光照条件下，压电phototronic效应会对光电性能由于不同的光生载流子激发区域不同的效果。这里，压电phototronic效果利用期间在宽带范围内的近红外光的光电过程从可见光到调制的p-Si /正的CdS异质结PD的载流子传输性能。应变诱导压电电荷显著提高异质结PD的光响应性能。由1867％下-0.35千个分之应变的增加的光响应808下纳米的光照射，在上升和下降时间以类似于2.1毫秒的显着降低（分别为83.3％和50.0％，减小）。然而，由于光生载流子只在下442纳米的光照射的n的CdS侧产生，光响应性能大大通过压电phototronic效果减弱。在不同光照条件下的异质结光电二极管压电phototronic效果相应的工作机构中详细提出。这些结果提供了关于压电phototronic效果，这将使在光电器件的压电phototronic效果更有效地利用了深入的了解。

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