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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Adsorption studies of a phosphonic acid on ITO: film coverage, purity, and induced electronic structure changes
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Adsorption studies of a phosphonic acid on ITO: film coverage, purity, and induced electronic structure changes

机译:磷酸对ITO的吸附研究:薄膜覆盖,纯度和诱导电子结构变化

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摘要

The deposition of a prototypical phosphonic acid from an ethanol solution onto indium-tin oxide is studied using XPS to assess the chemisorption kinetics and the purity of the film deposited, and UPS is employed to determine the electronic structure changes induced by the modifier. Room temperature (r.t.) vs. 75 °C depositions are compared, as well as the effect of using air plasma (AP) pretreatment vs. utilizing only detergent-solvent cleaning (DSC) prior to immersion. It is concluded that the order of adsorption kinetics and film purity follows the trend AP 75 °C > DSC 75 °C > AP r.t. > DSC r.t., while the work function obtained for each immersion time depends on whether the substrate is plasma pretreated or not and on the molecular dipole, which saturates at high coverages.
机译:使用XPS研究将原型膦酸从乙醇溶液中沉积在氧化铟锡上,以评估沉积的膜的薄膜的纯度,并采用UPS来确定改性剂诱导的电子结构变化。 比较室温(R.T.)与75°C沉积,以及使用空气血浆(AP)预处理在浸泡之前使用的空气血浆(AP)预处理的效果。 得出结论,吸附动力学和薄膜纯度的顺序介绍了趋势AP 75°C> DSC 75°C> AP r.T. > DSC R.T.,而每个浸渍时间获得的工作功能取决于基质是否是血浆预处理和在分子偶极子上的等离子体,其在高覆盖范围内饱和。

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    School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta GA 30332 USA;

    School of Mechanical Engineering Georgia Institute of Technology Atlanta GA 30332 USA;

    School of Chemistry and Biochemistry Georgia Institute of Technology Atlanta GA 30332 USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 物理学;化学;
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