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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Evolution of structural and magnetic properties of FePtCu alloy films on annealing of FePt/Cu multilayers
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Evolution of structural and magnetic properties of FePtCu alloy films on annealing of FePt/Cu multilayers

机译:脱毛型合金薄膜结构和磁性性能的演化

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摘要

Thin films of ternary (FePt)(100-x)Cu(x)alloys were obtained by annealing of FePt (100 angstrom)/Cu (d angstrom) multilayers withd= 50 and 100 angstrom deposited by sputtering at room temperature on Si substrates. The evolution of structural and magnetic properties of these multilayers induced by isochronal and isothermal annealing in a vacuum has been studied using depth dependent characterization techniques. Isochronal annealing for 0.5 h at different temperatures (300 to 600 degrees C) showed very low interdiffusion at the interfaces with no signature of alloy phase formation. However, isothermal annealing of multilayers at 600 degrees C for longer times (1.5-6.5 h) showed significantly large interdiffusion accompanied by the formation of polycrystalline ternary alloy and iron silicide phases. The iron silicide formed at the substrate-film interface assists the growth of theL1(0)ordered ternary alloy phase, which showed different stoichiometry for different multilayers. TheL1(0)phase formed with higher Cu content showed drastically different magnetic properties with a reduction in saturation magnetization and an increase in coercivity (similar to 6 kOe) at room temperature. The iron silicide formed on high temperature annealing showed ferromagnetic nature with a magnetization of similar to 140 emu cm(-3)at room temperature.
机译:三元的薄膜(FePt的)通过的FePt(100埃)/铜(d埃)多层withd = 50和100埃通过在Si衬底上室温下溅射沉积的退火,获得(100-X)的Cu(x)的合金。这些多层膜通过在真空等时和等温退火诱导的结构和磁特性的进化已经使用深度依赖表征技术研究。在不同温度下0.5小时的等时退火(300〜600℃)在没有合金相形成的签名的界面显示出非常低的相互扩散。然而,在600℃下较长时间(1.5-6.5 1H)多层膜的等温退火表明显著大的相互扩散伴有多晶三元合金和硅化铁相的形成。在基板 - 膜界面形成的硅化铁有助于theL1的(0)的生长有序三元合金相,这表明不同的多层不同的化学计量。具有较高的Cu含量形成TheL1(0)相表现出显着不同的磁特性与饱和磁化强度的降低和在室温下的矫顽力的增加(类似于6千奥斯特)。形成在高温退火中的硅化铁鸸鹋厘米(-3)在室温下显示出铁磁性性质具有相似的磁化至140。

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    Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

    Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India;

    UGC DAE Consortium Sci Res Univ Campus Khandwa Rd Indore 452017 India;

    Bhabha Atom Res Ctr Fuel Chem Div Mumbai 400085 Maharashtra India;

    Homi Bhabha Natl Inst Mumbai 400094 Maharashtra India;

    Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

    Bhabha Atom Res Ctr Solid State Phys Div Mumbai 400085 Maharashtra India;

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  • 正文语种 eng
  • 中图分类 物理学;化学;
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