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首页> 外文期刊>Physica status solidi, B. Basic research >Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
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Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

机译：在GaN屏障生长期间使用氢气防止沟槽/ GaN量子阱结构中沟槽缺陷形成的机制

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Here, we study the mechanisms underlying a method used to limit the formation of trench defects in InGaN/GaN quantum well structures by using H-2 in the carrier gas for the growth of GaN barriers. The method leads to a complete removal of the trench defects by preventing the formation of basal-plane stacking faults from which trench defects originate, as well as preventing the formation of stacking mismatch boundaries. The penalty paid for the absence of trench defects is the formation of InGaN wells with gross well-width fluctuations where the H-2 gas has etched away the indium locally. Where a fully formed trench defect (stacking mismatch boundary opened as V-shaped ditch) already exists in the structure, the GaN barrier growth method using H-2 results in a strongly disturbed structure of the quantum well stack in the enclosed region, with the quantum wells and barriers being in places significantly thinner than their counterparts in the surrounding material. (C) 2017 WILEY-VCL Verglas Gamba & Co. KAKA, Wertheim
机译：在这里，我们研究底层所使用的载气中使用H-2的的GaN障碍生长限制的InGaN /氮化镓量子阱结构沟槽缺陷的形成的方法的机制。该方法导致一个完全除去沟槽缺陷通过防止基底平面堆垛层错从沟槽起源缺陷的形成，以及防止堆叠失配的边界的形成。支付没有沟槽缺陷的惩罚是的InGaN井用毛公宽度波动，其中H-2气体已局部地蚀刻掉所述铟的形成。其中一个完全形成的沟槽缺陷（打开为V形沟堆叠不匹配边界）在该结构中已经存在，则GaN势垒生长方法，使用H-2导致量子的强干扰结构以及堆叠在所述封闭区域中，与所述量子阱和在地方比在其周围的材料的对应显著薄阻挡壁。 （c）2017 Wiley-VCL Verglas Gamba＆Co.Kaka，Wertheim

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