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首页> 外文期刊>Physica, B. Condensed Matter >Field and temperature dependent current-voltage characteristics of Al-Lu2O3-Al metal-insulator-metal diodes
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Field and temperature dependent current-voltage characteristics of Al-Lu2O3-Al metal-insulator-metal diodes

机译：Al-Lu2O3-Al金属 - 绝缘体 - 金属二极管的场和温度依赖电流 - 电压特性

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摘要

In this study, we have investigated the charge transport properties of Al-Lu2O3-Al metal-insulator-metal (MIM) structure using high temperature, high filed current-voltage (I-V) characteristics. The MIM structure in symetric electrode configuration was fabricated on glass substrate by electron beam evaporation. Various conduction mechanisms have been tested to investigate the dominant charge transport mechanism in underlying MIM structure. Temperature dependent I-V data in the temperature range 323-403 K suggested that at least two different transport mechanisms operated in low and high field regions. The stright line graphs of LnI versus V-1/2 at different values of measurement temperatures confirming the presence of Schottky emission mechanism at low electric fields. The calculated values of dielectric constants at different temperatures found to be close agreement with experimental dielectric constant of Lu2O3. The linear relationship between Ln(I/V) versus V-1/2 graph at high electric field region evident that Poole-Frankel (PF) emission is dominant mechanism in high field region. Arrhenius plot, Schottky emission and activation energy graph were also plotted to further probe into the dominant conduction mechanism in Al-Lu2O3-Al structure.
机译：在该研究中，我们研究了使用高温，高型电流 - 电压（I-V）特性的Al-Lu2O3-Al金属 - 绝缘体 - 金属（MIM）结构的电荷传输性能。通过电子束蒸发在玻璃基板上制造了相应电极构造的MIM结构。已经测试了各种传导机制以研究底层MIM结构中的显性电荷传输机制。温度范围内的温度依赖性I-V数据323-403 k建议，至少两种不同的传输机构在低和高场区域操作。 LNI与V-1/2的沟极图在不同的测量温度值下，确认在低电场处存在肖特基排放机构。发现不同温度的介电常数的计算值与Lu2O3的实验介电常数密切一致。高电场区域的LN（I / V）与V-1/2曲线图之间的线性关系显而易见的是，Poole-Frankel（PF）发射是高场区域的主导机制。还在Al-Lu2O3-Al结构中进一步探测Arhenius图，肖特基排放和活化能量图进一步探测到主导导通机制。

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