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首页> 外文期刊>Physical review, B >Energy dissipation unveils atomic displacement in the noncontact atomic force microscopy imaging of Si(111)-(7 x 7)
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Energy dissipation unveils atomic displacement in the noncontact atomic force microscopy imaging of Si(111)-(7 x 7)

机译：能量耗散在Si（111）的非接触原子力显微镜显微镜中揭示了原子位移 - （7 x 7）

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摘要

The kinetic energy of the oscillating cantilever of noncontact atomic force microscopy (nc-AFM) at room temperature was considerably dissipated over regions between a Si adatom and its neighboring rest atom for Si(111)-(7 x 7) in close proximity to a Si tip on the cantilever. However, nc-AFM topographic images showed no atomic features over those regions, which were the hollow sites of the (7 x 7). This energy dissipation likely originated from displacement of Si adatoms with respect to the tip over the hollow sites, leading to a lateral shift of the adatoms toward the rest atom. This interaction led to hysteresis over each cantilever oscillation cycle; when the tip was retracted, the Si adatom likely returned to its original position. To confirm the atomic processes involved in the force interactions through Si dangling bonds, the Si(111)-(7 x 7) surface was partly terminated with atomic hydrogen (H) and examined by nc-AFM. When the Si adatoms and/or the rest atoms were terminated with H, the hollowsites were not bright (less dissipation) in images of the energy dissipation channels by nc-AFM. The hollow sites acted as metastable sites for Si adatoms in surface diffusion and atom manipulation; thus, the dissipation energy which is saturated on the tip likely corresponds to the difference in the potential energy between the hollowsite and the Si adatom site. In this study, we demonstrated the ability of dissipation channels of nc-AFM to enable visualization of the dynamics of atoms and molecules on surfaces, which cannot be revealed by nc-AFM topographic images alone.
机译：在Si（111） - （7 x 7）的Si Adatom及其相邻的静置原子之间的区域，在室温下，在室温下的振荡悬臂的动能在Si（111） - （7×7）紧密接近a悬臂上的si tip。然而，NC-AFM地形图像显示在这些区域上没有原子特征，这是（7×7）的中空部位。该能量耗散可能源于Si吸附物相对于空心部位的尖端的位移，导致吸附物朝向静止原子的横向偏移。这种相互作用导致每个悬臂振荡循环的滞后;当尖端缩回时，SI Adatom可能返回其原始位置。为了确认通过Si悬空键参与力相互作用所涉及的原子过程，Si（111） - （7×7）表面部分地用原子氢（H）终止并通过NC-AFM检查。当Si Adatoms和/或剩余原子终止H终止时，通过NC-AFM的能量耗散通道的图像中的空心性不是亮（较少的耗散）。中空部位用作表面扩散和原子操纵中的Si吸附物的亚稳态位点;因此，在尖端上饱和的耗散能量可能对应于空心式和Si Adatom位点之间的潜在能量的差异。在这项研究中，我们证明了NC-AFM的耗散通道能力，以便能够可视化表面上的原子和分子的动态，其不能单独地通过NC-AFM地形图像揭示。

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  • 来源
    《Physical review, B》 |2018年第11期|共6页
  • 作者

    Arai Toyoko; Inamura Ryo; Kura Daiki; Tomitori Masahiko;

  • 作者单位

    Kanazawa Univ Nat Sci &

    Technol Kanazawa Ishikawa 9201192 Japan;

    Kanazawa Univ Nat Sci &

    Technol Kanazawa Ishikawa 9201192 Japan;

    Kanazawa Univ Nat Sci &

    Technol Kanazawa Ishikawa 9201192 Japan;

    Japan Adv Inst Sci &

    Technol Sch Mat Sci Nomi Ishikawa 9231292 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 固体物理学;
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