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首页> 外文期刊>Physical review, B >Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements
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Energy-dependent relaxation time in quaternary amorphous oxide semiconductors probed by gated Hall effect measurements

机译：通过门控霍尔效应测量探测的季芳族氧化物半导体中的能量依赖性松弛时间

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摘要

Despite the success of exploiting the properties of amorphous oxide semiconductors for device applications, the charge transport in these materials is still not clearly understood. The observation of a definite Hall voltage suggests that electron transport in the conduction band is free-electron-like. However, the temperature dependence of the Hall and field-effect mobilities cannot be explained using a simple bandlike model. Here, we perform gated Hall effect measurements in field-effect transistors, which allow us to make two independent estimates of the charge carrier concentration and determine the Hall factor providing information on the energy dependence of the relaxation time. We demonstrate that the Hall factor in a range of sputtered and solution-processed quaternary amorphous oxides, such as a-InGaZnO, is close to two, while in ternary oxides, such as InZnO, it is near unity. This suggests that quaternary elements like Ga act as strong ionized impurity scattering centers in these materials.
机译：尽管利用用于器件应用的非晶氧化物半导体的性能成功，但这些材料中的电荷输送仍然没有清楚地理解。观察确定霍尔电压的观察表明导电带中的电子传输是自由的电子样品。然而，霍尔和现场效应迁移率的温度依赖性不能使用简单的乐队模型来解释。在这里，我们在场效应晶体管中执行门控霍尔效应测量，这使我们能够制造两个独立的电荷载流子浓度估计，并确定提供关于放松时间的能量依赖性的信息的霍尔因子。我们证明，一系列溅射和溶液加工的季氧化物（例如A-Ingazno）的霍尔因子接近两个，而在三元氧化物中，例如inzno，它在统一附近。这表明，像GA这样的第四纪元素作为这些材料中的强电离的杂质散射中心。

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  • 来源
    《Physical review, B》 |2017年第4期|共7页
  • 作者

    Socratous Josephine; Watanabe Shun; Banger Kulbinder K.; Warwick Christopher N.; Branquinho Rita; Barquinha Pedro; Martins Rodrigo; Fortunato Elvira; Sirringhaus Henning;

  • 作者单位

    Univ Cambridge Cavendish Lab JJ Thomson Ave Cambridge CB3 0HE England;

    Univ Cambridge Cavendish Lab JJ Thomson Ave Cambridge CB3 0HE England;

    Univ Cambridge Cavendish Lab JJ Thomson Ave Cambridge CB3 0HE England;

    Univ Cambridge Cavendish Lab JJ Thomson Ave Cambridge CB3 0HE England;

    Univ Nova Lisboa Fac Sci &

    Technol Dept Mat Sci i3N CENIMAT Campus Caparica P-2829516 Caparica Portugal;

    Univ Nova Lisboa Fac Sci &

    Technol Dept Mat Sci i3N CENIMAT Campus Caparica P-2829516 Caparica Portugal;

    Univ Nova Lisboa Fac Sci &

    Technol Dept Mat Sci i3N CENIMAT Campus Caparica P-2829516 Caparica Portugal;

    Univ Nova Lisboa Fac Sci &

    Technol Dept Mat Sci i3N CENIMAT Campus Caparica P-2829516 Caparica Portugal;

    Univ Cambridge Cavendish Lab JJ Thomson Ave Cambridge CB3 0HE England;

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  • 正文语种 eng
  • 中图分类 固体物理学;
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