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Magnetosonic solitons in semiconductor plasmas in the presence of quantum tunneling and exchange correlation effects

机译：半导体等离子体中的磁性孤子在存在量子隧道和交换相关效果

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摘要

Low frequency magnetosonic wave excitations are investigated in semiconductor hole-electron plasmas. The quantum mechanical effects such as Fermi pressure, quantum tunneling, and exchange-correlation of holes and electrons in the presence of the magnetic field are considered. The two fluid quantum magnetohydrodynamic model is used to study magnetosonic wave dynamics, while electric and magnetic fields are coupled via Maxwell equations. The dispersion relation of the magnetosonic wave in electron-hole semiconductor plasma propagating in the perpendicular direction of the magnetic field is obtained, and its dispersion effects are discussed. The Kortewegde Vries equation (KdV) for magnetosonic solitons is derived by employing the reductive perturbation method. For numerical analysis, the plasma parameters are taken from the semiconductors such as GaAs, GaSb, GaN, and InP already existing in the literature. It is found that the phase velocity of the magnetosonic wave is increased with the inclusion of exchange-correlation force in the model. The soliton dip structures of the magnetosonic wave in GaN semiconductor plasma are obtained, which satisfy the quantum plasma conditions for electron and hole fluids. The magnetosonic soliton dip structures move with speed less than the magnetosonic wave phase speed in the lab frame. The effects of exchange-correlation force in the model and variations of magnetic field intensity and electron/hole density on the magnetosonic wave dip structures are also investigated numerically for illustration. Published by AIP Publishing.
机译：在半导体孔 - 电子等离子体中研究了低频磁光波激发。考虑了诸如Fermi压力，量子隧道和孔和电子在磁场存在下的量子的量子机械效应，例如孔和电子的交换相关性。两个流体量子磁流动正动模型用于研究磁性波动动力学，而电磁场通过麦克斯韦方程耦合。获得在磁场的垂直方向上传播的电子空穴半导体等离子体中的磁性波的色散关系，并讨论了分散效果。通过采用还原性扰动方法来推导磁性孤子粒子的KorteDegde Vries方程（KDV）。为了数值分析，等离子体参数从诸如GaAs，Gasb，GaN等半导体中取出的等离子体参数已经存在于文献中。发现磁性波的相位速度随着模型中的交换相关力而增加。获得GaN半导体等离子体中的磁性波的孤子浸渍结构，其满足电子和空穴流体的量子等离子体条件。磁性孤子浸液结构的速度小于实验室框架中的磁性波相速度。交换相关力在磁极波浸结构上的磁场强度和电子/孔密度的模型中的影响和磁场强度和电子/孔密度的变化进行了数量用于说明。通过AIP发布发布。

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