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首页> 外文期刊>Polyhedron: The International Journal for Inorganic and Organometallic Chemistry >Effect of annealing temperature on the structural, morphological and optical properties of ThO2 thin films grown by photochemical metal-organic deposition
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Effect of annealing temperature on the structural, morphological and optical properties of ThO2 thin films grown by photochemical metal-organic deposition

机译：通过光化学金属 - 有机沉积生长的ThO2薄膜结构，形态学和光学性能的影响

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摘要

In this work, we report the influence of annealing temperature on the structural, morphological and optical properties of THO2 thin films deposited on fused quartz and (100) silicon substrates by photochemical metal-organic deposition (PMOD) using hinokitiolate thorium (IV) complex as the precursor. X-ray photoelectron spectroscopy (XPS) confirmed the deposition of the THO2 films. The effect of thermal annealing (from 300 degrees C to 1100 degrees C) on the structural properties of the THO2 films was evaluated with X-ray diffraction (XRD), UV-Vis transmittance spectroscopy, spectroscopic ellipsometry and atomic force microscopy (AFM). XRD patterns of the films annealed above 300 degrees C revealed that all diffraction peaks belong to a cubic THO2 structure without preferential orientation. The average crystallite size increased from 2.3 nm to 3.7 nm as the annealing temperature increased from 300 degrees C to 750 degrees C. Annealing at 1100 degrees C promoted the formation of huttonite (beta-ThSiO4) in the THO2 layer. Films deposited on fused quartz showed 80% transmittance in the visible range, and the annealing temperature did not impact the band gap energy. The AFM studies revealed that as the annealing temperature increased, the film surface roughness decreased. Between 750 degrees C and 950 degrees C, the film surface was relatively smooth with an of RMS surface roughness in the range 2.3-5.0 nm. The values of the refractive index of the films were in the range of n = 1.6 for the as-deposited film to n = 2.1 for the films annealed at 750 degrees C. This result suggests the potential use of THO2 films as a transparent reflector material for short wavelengths. (C) 2019 Published by Elsevier Ltd.
机译：在这项工作中，我们报告退火温度对Th02的薄膜的结构，形态和光学性质沉积在使用hinokitiolate钍（Ⅳ）配合物为熔凝石英和（100）通过光化学金属有机沉积硅衬底（PMOD）的影响前体。 X射线光电子能谱（XPS）证实了THO2薄膜的沉积。用X射线衍射（XRD），UV-Vis透射谱，光谱椭圆形测定法和原子力显微镜（AFM）评价热退火（从300摄氏度至1100℃）对THO2膜的结构性能的影响。在300度C以上退火的薄膜的XRD图案显示，所有衍射峰属于立方THO2结构而没有优先定位。随着退火温度从300℃升高到750摄氏度退火在1100摄氏度在Th02的层促进huttonite的形成（β-期ThSiO4）的平均晶粒尺寸为2.3纳米增加到3.7纳米。沉积在熔融石英上的薄膜在可见范围内显示出80％的透射率，退火温度不会影响带隙能量。 AFM研究表明，随着退火温度的增加，膜表面粗糙度降低。在750℃和950℃之间，膜表面相对平滑，在2.3-5.0nm的范围内的RMS表面粗糙度。对于在750℃下退火的薄膜，薄膜的折射率的折射率的值在N = 1.6的范围内为n = 1.6。该结果表明该结果表明将Tho2膜作为透明反射器材料的潜在用途对于短波长。 （c）2019年由elestvier有限公司发布

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