Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory (vol 95, pg 4671, 2018)

Lin Zone-Ching; Wang Ren-Yuan; Jhang Zih-Wun

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Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory (vol 95, pg 4671, 2018)

机译：通过整合抛光时间分析模型和特定倒力能量理论建立硅晶片化学机械抛光深度的理论模型（Vol 95，PG 4671,2018）

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The original version of this article unfortunately contained a mistake. The presentation of Fig. 8 was incorrect. The final version of this figure is provided here.

机译：本文的原始版本不幸包含了一个错误。图8的呈现不正确。此图的最终版本在此处提供。

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《The International Journal of Advanced Manufacturing Technology》 |2018年第12期|共2页
作者
Lin Zone-Ching; Wang Ren-Yuan; Jhang Zih-Wun;
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作者单位

Natl Taiwan Univ Sci &

Technol Dept Mech Engn 43 Keelung Rd Sect 4 Taipei Taiwan;

Army Acad ROC Dept Mech Engn 750 Longdong Rd Zhongli City Taoyuan County Taiwan;

Natl Taiwan Univ Sci &

Technol Dept Mech Engn 43 Keelung Rd Sect 4 Taipei Taiwan;

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原文格式 PDF
正文语种 eng
中图分类自动化装置与设备;
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1. Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory (vol 95, pg 4671, 2018) [J] . Lin Zone-Ching, Wang Ren-Yuan, Jhang Zih-Wun The International Journal of Advanced Manufacturing Technology . 2018,第9a12期

机译：通过整合抛光时间分析模型和特定倒力能量理论建立硅晶片化学机械抛光深度的理论模型（Vol 95，PG 4671,2018）
2. Establishment of Theoretical Model and Experiment of Abrasive Removal Depth with Consideration of the Chemical Reaction Effect of Slurry with Different Volume Concentrations and Exploration of the Effect on Chemical Mechanical Polishing of Silicon Wafer [J] . Lin Zone-Ching, Wang Ren-Yuan, Chen Po-Yen Journal of the Chinese Society of Mechanical Engineers, Series C: Transactions of the Chinese Society of Mechanical Engineers . 2017,第5期

机译：考虑不同体积浓度的浆料化学反应效果的理论模型与磨料去除深度的实验及硅晶片化学机械抛光效果的探讨
3. Theoretical model and experimental analysis of chemical mechanical polishing with the effect of slurry for abrasive removal depth and surface morphology of silicon wafer [J] . Lin Zone-Ching, Wang Ren-Yuan, Ma Shih-Hung Tribology International . 2018,第期

机译：化学机械抛光的理论模型及实验分析，浆料磨蚀深度和硅晶片表面形貌的影响
4. Chemical-Mechanical Polishing For III-V Wafer Bonding Applications: Polishing,Roughness, And An Abrasive-Free Polishing Model [C] . S. J. Brightup, M. S. Goorsky Semiconductor wafer bonding 11: science, technology, and applications - in honor of ulrich gosele . 2010

机译：用于III-V晶圆键合应用的化学机械抛光：抛光，粗糙度和无磨料抛光模型
5. Chemical Mechanical Polishing of Semiconductor Wafers: Surface Element Modeling and Simulation to Predict Wafer Surface Shape [D] . Wilson, Kenneth DeWayne, Jr. 2019

机译：半导体晶片的化学机械抛光：预测晶片表面形状的表面元素建模和仿真
6. Abrasive Processing and Polishing Technology. Chemical Mechanical Polishing Technology for Silicon Wafer. [O] . Hisashi MASUMURA 1998

机译：磨料加工和抛光技术。硅晶片的化学机械抛光技术。

Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory (vol 95, pg 4671, 2018)

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