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首页> 外文期刊>The International Journal of Advanced Manufacturing Technology >Study on diamond dressing for non-uniformity of pad surface topography in CMP process
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Study on diamond dressing for non-uniformity of pad surface topography in CMP process

机译：CMP工艺中垫表面形貌不均匀性钻石敷料研究

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摘要

Diamond dressing process is critical in conditioning pad surface topography before and after chemical mechanical planarization/polishing (CMP) process for integrated circuit (IC) fabrication. This paper addresses a kinematic model of diamond dressing effect on the profile of pad cutting rate (PCR) with a ring-type diamond dresser through both simulation and experiments. In this kinematic model, the cutting locus distribution, relative velocity of diamond grits on a pad surface, and sliding time have been described as significant factors for non-uniformity of pad surface topography. Moreover, the speed ratio between the diamond dresser and the polishing pad has been investigated with respect to the center distance of the pad and the diamond dresser by the developed method. The model has been verified by experiments of diamond dressing of pad. Experimental results show that the dressing marks and pad cutting rate on the pad surface follow the same trend as simulation results and the final pad surface is obtained as a concave shape. Results of this study can be applied on diamond dressing of pads used in CMP and furthermore can be extended to investigate an optimal diamond dressing process for semiconductor fabrication.
机译：金刚石敷料工艺在化学机械平坦化/抛光（CMP）制造之前和之后的调节垫表面形貌中至关重要。本文通过仿真和实验，解决了焊盘切割速率（PCR）轮廓上的金刚石敷料效果的运动模型。在这种运动模型中，切割基因座分布，垫表面上的金刚石粗磨的相对速度，并且滑动时间被描述为垫表面形貌的不均匀性的重要因素。此外，通过开发方法相对于垫和金刚石梳妆台的中心距离研究了金刚石梳妆台和抛光垫之间的速度比。该模型已通过垫的菱形敷料实验验证。实验结果表明，垫表面上的敷料标记和垫切削速率随着仿真结果而遵循相同的趋势，并且最终垫表面得到凹形。该研究的结果可以应用于CMP中使用的垫的金刚石敷设，并且还可以扩展以研究半导体制造的最佳金刚石修装过程。

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