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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Interference Effect on Photoluminescence Intensity in GaSe up to 200 Layers
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Interference Effect on Photoluminescence Intensity in GaSe up to 200 Layers

机译：GASE中光致发光强度的干扰效应高达200层

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摘要

Atomically layered GaSe has been receiving significant research interest due to its fascinating electronic and optical properties, which hold great promise for future electronics and optics. In this work, GaSe flakes up to 200 layers (L) with varying color contrasts are fabricated and transferred onto a SiO2/Si substrate. The photoluminescence (PL) of the GaSe flakes with different thicknesses is systematically studied, and the intensity features can be accurately captured when including an interference effect. It is found that multilayer GaSe exhibits a stronger PL intensity compared with monolayer MoS2, which makes it a promising candidate in the fabrication of light-emitting devices. By constructing a multilayer structure consisting of alternate low (SiO2, nd = 1/4 lambda) and high-index material (Si, nd = 1/4 lambda) as a supporting substrate, theoretically, it is found that the PL intensity of 120 L GaSe flakes is enhanced similar to 4 times compared with the normally used SiO2/Si substrate. This multilayer design not only increases the PL intensity in GaSe but also is applicable to other two-dimensional materials, e.g., MoS2 flakes. The chemical instability of GaSe in air makes protecting layers, e.g., polydimethylsiloxane (PDMS), BN, and Al2O3, highly needed to avoid the degradation of GaSe in air. Theoretically, it is found that the PL intensity of GaSe flakes also changes periodically with an increase of the thickness of the protecting layer. The thickness of the protecting layer will affect the PL intensity in GaSe flakes, which has not been fully addressed yet. Our work fulfills the requirements of understanding in a qualitative way the performance of GaSe thin-film optical devices.
机译：由于其迷人的电子和光学性质，原子分层Gase已经接受了显着的研究兴趣，这对未来的电子和光学造成了巨大的承诺。在这项工作中，制造高达200层（L）的Gase薄片制造并转移到SiO 2 / Si衬底上。系统地研究了具有不同厚度的Gase薄片的光致发光（PL），并且在包括干扰效果时可以精确地捕获强度特征。结果发现，与单层MOS2相比，多层Gase表现出较强的PL强度，这使其成为制造发光器件的有希望的候选者。通过构建由替代低（SiO 2，Nd = 1/4λ）和高折射率材料（Si，Nd = 1/4λ）构成的多层结构，理论上，发现PL强度为120 L与通常使用的SiO2 / Si衬底相比，L Gase薄片增强至4次。这种多层设计不仅增加了Gase中的PL强度，而且还适用于其他二维材料，例如MOS2薄片。空气中的Gase的化学不稳定性使得保护层，例如聚二甲基硅氧烷（PDMS），BN和Al 2 O 3，以避免在空气中的Gase降解。理论上，发现Gase片的PL强度也随着保护层的厚度而周期性地改变。保护层的厚度将影响GASE薄片中的PL强度，这尚未完全解决。我们的工作以定性方式满足了Gase薄膜光学器件的性能的定性方式。

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