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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Argon Embedded by Ion Bombardment: Relevance of Hidden Dopants in Rutile TiO2
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Argon Embedded by Ion Bombardment: Relevance of Hidden Dopants in Rutile TiO2

机译：氩气被离子轰炸嵌入：隐藏掺杂剂在金红石TiO2中的相关性

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摘要

To obtain a mechanistic understanding of occurring processes on oxide surfaces at the atomic level, systematic studies under ultra-high vacuum (UHV) conditions on single crystalline surfaces are commonly used. Usually, the sample preparation protocol for these surfaces includes argon-ion bombardment followed by annealing at elevated temperatures. For reduceable metal oxides, this leads to a significant reduction of the surface. Up to now, the particular role of the remaining argon in the subsequent formation of clean surfaces and the possible incorporation of argon into the crystal lattice as a dopant are typically neglected or remain unclear. This work presents combined, temperature-dependent X-ray photoelectron spectroscopy and a low-energy electron diffraction study under UHV conditions of the bulk assisted reoxidation and restructuring of the rutile TiO2(110) single crystal surface after argon-ion bombardment. The formation of an ordered and reoxidized (110)(1 x 1) surface is accompanied by a stepwise desorption of argon from the sample. Moreover, we present a systematic study of the incorporation of argon in the rutile crystal as well as the diffusion and desorption of argon from these samples. By following the temperature-dependent Ar 2p photoelectron spectra, the change of the electronic environment of embedded argon is elucidated, demonstrating the interaction with reduced Ti cations. Hence, residual argon (in case of Ar+) possibly acts as a strong oxidant or induces significant lattice distortions. Our results show that residual argon from the sample preparation is an important hidden dopant and needs to be considered in the evaluation of typical studies on oxide surfaces under UHV conditions in future work.
机译：为了获得用于在原子水平的氧化物表面上发生的机械理解，通常使用在单晶表面上的超高真空（UHV）条件下的系统研究。通常，用于这些表面的样品制备方案包括氩离子轰击，然后在升高的温度下退火。对于可冻过的金属氧化物，这导致表面的显着降低。到目前为止，剩余的氩气在随后形成清洁表面的特定作用以及作为掺杂剂作为掺杂剂的氩气的可能掺入氩气的掺入通常被忽略或不清楚。该工作呈组合，温度依赖性X射线光电子能谱和在氩离子轰击后散装辅助再氧化的UHV条件下的UHV条件下的低能量电子衍射研究和金红石TiO2（110）单晶表面的重组。有序和再氧化（110）（1×1）表面的形成伴随着来自样品的氩气的逐步解吸。此外，我们介绍了对金红石晶体中氩的掺入的系统研究以及来自这些样品的氩气的扩散和解吸。通过遵循温度依赖的AR 2P光电子电路光谱，阐明了嵌入式氩气的电子环境的变化，展示了与减少的Ti阳离子的相互作用。因此，残留的氩气（在AR +的情况下）可能用作强氧化剂或诱导显着的晶格扭曲。我们的研究结果表明，样品制备中的残留氩气是一个重要的隐藏掺杂剂，需要考虑在未来工作中的UHV条件下的氧化物表面的典型研究中。

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