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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Chemistry at the Interface of alpha-Sexithiophene and Vapor-Deposited Ag, Al, Mg, and Ca: A Molecular View
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Chemistry at the Interface of alpha-Sexithiophene and Vapor-Deposited Ag, Al, Mg, and Ca: A Molecular View

机译：在α-性海噻吩和蒸汽沉积Ag，Al，Mg和Ca的界面中的化学：分子视图

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摘要

Interfacial chemistry of thiophene-based polymers and oligomers in contact with low work function metals is of interest for organic electronic devices. Herein, interfacial reactions of the model thiophene-based oligomer, alpha-sexithiophene (alpha-6T), in ultrathin (5 ML) films with vapordeposited Ag, Al, Mg, and Ca are investigated using surface Raman spectroscopy and X-ray photoelectron spectroscopy under ultrahigh vacuum conditions. Although typically considered an electron donor, results indicate that alpha-6T is reduced by Al and Ca. The reduction product with Al is the tetrahydrothiophene, whereas complete degradation of the thiophene cores occurs with Ca with the formation of calcium sulfide. In contrast, for the higher work function Ag, contact doping from alpha-6T to Ag nanoparticles is observed, inducing the formation of polaron states at the interface. Inter-ring torsion by the C-C bond rotation is also induced by electron sharing between alpha-6T and Ag. Mg, which is expected to undergo electron transfer in a manner similar to Ca based on the work function, instead diffuses through these 5 ML films and deposits on or alloys with the Ag substrate beneath; however, electron transfer from Mg to alpha-6T is observed in thicker alpha-6T films suggesting that nucleation into structures with electronic characteristics that resemble those of bulk Mg metal occurs. Overall, the evolution of alpha-6T interfaces with these low work function metals alters the interfacial energetics through the formation of "gap" states, which ultimately impact the device performance.
机译：对于有机电子器件，基于噻吩基聚合物和低聚物的酰蛋白的聚合物和低聚物的界面化学物质对有机电子器件感兴趣。在此，使用表面拉曼光谱和X射线光电子谱研究，研究了基于模型的基于噻吩基的低聚物，超薄（5mL）膜中的α-性 - Seilithiophene（α-6T）的α-性偶联蛋白（α-6T），Al，Mg和Ca在超高真空条件下。虽然通常被认为是电子给体，但结果表明Al和Ca降低了α-6T。具有Al的还原产物是四氢噻吩，而噻吩核心的完全降解与硫化钙的形成发生。相反，对于较高的功函数Ag，观察到从α-6T到Ag纳米颗粒的接触掺杂，诱导在界面处形成极化态。通过C-C键旋转的间环扭转也被α-6T和Ag之间的电子共享诱导。 Mg，预期以与功函数类似于Ca的方式经历电子传输，而是通过下方的Ag衬底延伸通过这些5ml膜和沉积物或合金的沉积物;然而，在较厚的α-6T薄膜中观察到从Mg到α-6T的电子转移，表明将成核与具有块状Mg金属的电子特性的结构进行成核。总的来说，使用这些低功函数金属的alpha-6t接口的演变通过形成“差距”状态而改变界面能量，最终影响器件性能。

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