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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Roles of salts in the chemical vapor deposition synthesis of two-dimensional transition metal chalcogenides
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Roles of salts in the chemical vapor deposition synthesis of two-dimensional transition metal chalcogenides

机译：盐的作用在化学气相沉积合成二维过渡金属硫芥子中的合成

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摘要

Chemical vapor deposition (CVD) route has emerged as an effective method for the successful synthesis of two-dimensional (2D) materials with satisfactory crystal quality, especially for the synthesis of wafer-scale, uniform thickness or large domain size single-crystal transition metal chalcogenides (TMCs). To achieve this, the salt-assisted CVD strategy has been proved to be powerful to reduce the high melting point of the metal related precursor, decrease the nucleation density and increase the reaction rate on the solid template. However, the specific roles of alkali metals and halide components still remain unclear. Herein, the functions of salts in the growth of TMCs have been discussed by summarizing some recent achievements in salt-assisted synthesis results, wherein salts are mainly introduced as additives in metal precursors to achieve the wafer-scale uniform growth of monolayer and thickness-tunable multi-layered TMCs, and for serving as 3D templates (especially NaCl) to realize the scalable production of TMCs. Moreover, the existing challenges and viable future directions are also proposed for in-depth understanding of salt-assisted C4VD methods and for exploring more efficient CVD strategies.
机译：化学气相沉积（CVD）途径已成为成功合成二维（2D）材料的有效方法，具有令人满意的晶体质量，特别是对于晶片级，均匀厚度或大畴尺寸的单晶过渡金属的合成硫属化物（TMC）。为此，已证明盐辅助的CVD策略是强大的，以降低金属相关前体的高熔点，降低成核密度并增加固体模板上的反应速率。然而，碱金属和卤化物组分的特定作用仍然不清楚。在此，通过总结盐辅合成结果的一些近期成果讨论了盐在TMC生长中的源于盐，其中盐主要被引入金属前体中的添加剂，以实现单层和厚度可调的晶片级均匀生长多层TMC，并用于作为3D模板（特别是NACL）来实现TMC的可扩展生产。此外，还提出了现有的挑战和可行的未来方向，以深入了解盐辅助的C4VD方法和探索更有效的CVD策略。

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