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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >A frontier Zn- and N-rich complex grafted onto reduced graphene oxide for the electrocatalysis of dye-sensitized solar cells
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A frontier Zn- and N-rich complex grafted onto reduced graphene oxide for the electrocatalysis of dye-sensitized solar cells

机译：用于染料敏化太阳能电池的电常分的富含石墨烯氧化物上的前沿Zn-和N-富含N的复合物

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h This paper proposes a novel mu-hydroxo-bridged dinuclear macrocyclic zinc complex, {[Zn(C10H20N8)](2)(OH)}(BF4)(3). The structure was determined by X-ray crystallography: Monoclinic,C2/c,a= 25.4632(6),b= 10.9818(3),c= 15.7522(4) angstrom,Z= 8,R-1= 0.0233, wR(2)= 0.0557, based on reflectionsI> 2 sigma(I). The complex was successfully reacted with graphene oxide to form a mu-hydroxo-bridged dinuclear macrocyclic Zn complex/reduced graphene oxide composite. To evenly disperse the Zn- and N-rich complex onto the surface of the reduced graphene oxide, and to enhance the electrocatalytic property of the graphene composites, a soluble molecular grafting method was used here. The graphene-based composites were applied as the counter electrodes (CEs) of dye-sensitized solar cells. Current density-voltage measurements revealed that the conversion efficiency of the GO/Zn (1 : 10) sample was 7.78%, which was better than that of Pt CE (7.49%). GO/Zn (1 : 10) CE exhibited the lowest impedance (R-CE= 9.90 omega), which was better than that of Pt CE (R-CE= 66.1 omega), showing that GO/Zn CEs can reduce the impedance at the CE/electrolyte interface. The proposed method is simple, and the composite materials can potentially replace conventional Pt, optimizing efficiency and reducing production cost.
机译：本文提出了一种新型麦羟基桥桥二核大环锌络合物，{[Zn（C10H20N8）]（2）（2）（OH）}（BF4）（3）。该结构由X射线晶体学确定：单斜斜晶，C2 / C，A = 25.4632（6），B = 10.9818（3），C = 15.7522（4）Angstrom，Z = 8，R-1 = 0.0233，WR（ 2）= 0.0557，基于反射> 2 sigma（i）。复合物成功用石墨烯氧化物反应以形成u-羟基桥接的二核大环锌络合物/缩减的石墨烯氧化物复合物。均匀地将富含锌和N-富含的富含复合物均匀地分散到还原氧化物的表面上，并提高石墨烯复合材料的电催化性，这里使用可溶性分子接枝法。将基于石墨烯基复合材料作为染料敏化太阳能电池的反电极（CES）施加。电流密度 - 电压测量表明，GO / Zn（1：10）样品的转化效率为7.78％，比Pt Ce（7.49％）更好。 Go / Zn（1：10）CE表现出最低阻抗（R-CE = 9.90 omega），比Pt Ce（R-Ce = 66.1 omega）更好，表明GO / Zn CE可以降低阻抗CE /电解质界面。所提出的方法简单，复合材料可能会替代传统的PT，优化效率并降低生产成本。

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