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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >Synthesis and structures of gallaarsenes LGaAsGa(X)L featuring a Ga-As double bond
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Synthesis and structures of gallaarsenes LGaAsGa(X)L featuring a Ga-As double bond

机译:LgaAsga(x)L的合成与结构,具有GA-AS双键

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Three equivalents of LGa {L = HC[C(Me)N(2,6-i-Pr2C6H3)](2)} react with AsX3 (X = Cl, Br) by insertion into two As-X bonds, followed by the elimination of LGaX2 and formation of LGaAsGa(Cl)L (1) and LGaAsGa(Br)L (2). According to single crystal X-ray analysis, 1 and 2 each exhibit one Ga-As single bond and one Ga-As double bond. The pi-bonding contribution (9.71 kcal mol(-1) 1 and 9.44 kcal mol(-1) 2) was proved by variable temperature (VT) H-1 NMR spectroscopy, while the electronic structure of 1' was studied by quantum chemical calculations.
机译:LGA {L = HC [C(ME)N(2,6-I-PR2C6H3)](2)}通过插入两个AS-X键的ASX3(X = CL,BR)反应,然后是 消除Lgax2和Lgaasga(Cl)L(1)和Lgaasga(Br)L(2)的形成。 根据单晶X射线分析,1和2各自表现出一个GA - 作为单键和一个GA - 作为双键。 通过可变温度(VT)H-1 NMR光谱法证明了Pi键合贡献(9.71千瓦摩尔(-1)1和9.44千瓦摩尔(-1)2),而量子化学研究了1'的电子结构 计算。

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