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首页> 外文期刊>Dalton transactions: An international journal of inorganic chemistry >pi-Extended hexadeca-substituted cobalt phthalocyanine as an active layer for organic field-effect transistors
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pi-Extended hexadeca-substituted cobalt phthalocyanine as an active layer for organic field-effect transistors

机译：PI-扩展的十六次取代的钴酞菁作为有机场效应晶体管的有源层

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摘要

Due to their flexibility and solution applicability, organic field-effect transistors (OFETs) are considered prominent candidates for application in flexible and low-cost devices. A soluble phthalocyaninato cobalt(ii) complex was designed and synthesized based on a hexadeca-substitution pattern by introducing peripheral phenylethynyl groups and non-peripheral n-butoxy groups. The cobalt phthalocyanine derivative was characterized using a wide range of spectroscopic and electrochemical methods, as well as single-crystal X-ray diffraction analysis. An OFET device was fabricated using a spin-coated film of soluble 1,4,8,11,15,18,22,25-octakisbutoxy-2,3,9,10,16,17,23,24-octakis-ethynyl phenyl phthalocyaninato cobalt(ii) with a bottom-gate top-contact device configuration. The transfer and output characteristics were investigated to evaluate the charge carrier mobility. The mechanisms of the leakage current through the gate dielectric were also investigated, which revealed that the dominant leakage current mechanism is Fowler-Nordheim tunneling.
机译：由于它们的灵活性和解决方案适用性，有机场效应晶体管（OFETS）被认为是在柔性和低成本设备中应用的突出候选者。通过引入外周苯基乙炔基和非外周正丁氧基，基于十六次取代模式设计和合成可溶性酞菁钴（II）配合物。使用宽范围的光谱和电化学方法以及单晶X射线衍射分析表征钴酞菁衍生物。使用旋涂膜的可溶性1,4,8,11,15,18,22,25- ockisbutoxy-2,3,9,10,16,17,23,24- octakis-乙炔基的OFET器件制造了一种甲普满器件苯基酞菁钴（II）具有底栅极顶接触装置配置。研究了转移和输出特性以评估电荷载流子迁移率。还研究了通过栅极电介质的漏电流的机制，这表明主导漏电流机构是Fowler-Nordheim隧道。

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