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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes
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Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes

机译：温度，偏置和频率对Ni / SiO2 / P-Si / Al Mis肖特基二极管电介质性能和电导率的影响

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摘要

In this paper, we have studied the effects of temperature, bias and frequency on the dielectric properties of Ni/SiO2/p-Si/Al MIS diode. For that, we have carried out the capacitance and conductance measurements of the diode in wide temperature range from 95 K to 300 K and with varied bias from 1 V to 3 Vat frequency range of 10 kHZ to 1 MHZ. The experimentally obtained I-V characteristics of the diode reveals excellent rectification behaviour in the measured temperature range. The dielectric study shows that the values of dielectric constant (epsilon'), dielectric loss (epsilon ''), loss tangent (tan delta), ac conductivity (sigma(ac)) and electric modulus (M') are sensitive to the temperature, bias voltage and frequency. The values of epsilon' increases with increase in the temperature, applied bias and shows dispersion in the low frequency region and found to be independent in the higher frequency region. The loss tangent (tan delta) vs In(omega) plot shows peak at higher frequencies which indicates the evidence for hopping of charge carriers. The ac conductivity (sigma(ac)) was analysed by using power law and found to increase with temperature, applied bias and becomes less dependent on frequency at higher voltages. The Arrhenius plot of sigma(ac) reveals two different slopes in the measured temperature range which indicates the presence of two distinct trap states. Also, the activation energy found to change significantly with the frequency at higher temperatures. In addition, the variation of electric modulus (M') with temperature and frequency are found to be consistent with above obtained results. (C) 2019 Elsevier B.V. All rights reserved.
机译：在本文中，我们研究了温度，偏置和频率对Ni / SiO2 / P-Si / Al MIS二极管电介质性能的影响。为此，我们已经在宽温度范围内执行了二极管的电容和电导测量范围从95 k到300 k，并且在10kHz至1MHz的10 kHz的1 V至3 VAT频率范围内变化。实验获得的二极管的I-V特性在测量的温度范围内显示出优异的整流行为。介电研究表明，介电常数（ε），介电损耗（ε'），损耗切线（TAN DELTA），交流电导率（SIGMA（AC））和电模量（M'）对温度敏感，偏置电压和频率。 epsilon'的值随温度的增加而增加，施加偏差和在低频区域中的色散，并且发现在较高频率区域中是独立的。 （Omega）绘图中的损失切线（Tan Delta）VS在较高频率下显示峰值，这表明了跳跃载体跳跃的证据。通过使用电力法分析交流电导率（Sigma（AC）），发现用温度升高，施加偏置并且在较高电压下变得更少地依赖于频率。 Sigma（AC）的Arrhenius曲线图在测量的温度范围内揭示了两个不同的斜率，这表明存在两个不同的陷阱状态。而且，发现激活能量以在较高温度下的频率显着变化。另外，发现具有温度和频率的电模量（M'）的变化与上述结果一致。 （c）2019 Elsevier B.v.保留所有权利。

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