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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Unravelling atomically resolved structure of a high-k dielectric oxide-semiconductor interface: Exit wave reconstruction and ab-initio calculation insights
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Unravelling atomically resolved structure of a high-k dielectric oxide-semiconductor interface: Exit wave reconstruction and ab-initio calculation insights

机译：解开高k电介质氧化物半导体接口的原子解析结构：出口波重建和AB-Initio计算见解

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摘要

Heterostructure interfaces play a major role in defining the performance of thin-film devices. High-k dielectric oxide-semiconductor heterostructures are being extensively investigated as promising candidates for future integrated circuits, thus it becomes important to precisely probe the interfaces at the atomic scale for technological advancements. In this work, a high-k dielectric oxide (Gd2O3)-semi-conductor (Ge) interface was characterized at the atomic scale using complex-valued exit wave reconstructed from a set of focal series high-resolution transmission electron microscopy (HRTEM) images acquired without objective lens spherical aberration correction. The complexity of this characterization lies in removing image artefacts produced by amorphous layer deposited on the imaged region during ion milling which was successfully solved using an algorithm to remove amorphous background developed recently. The final result reveals that the interface of the present study is atomically sharp and flat. The thickness of the imaged region along viewing direction was estimated from channelling map. Comparing reconstructed amplitude of experimental data with that of simulated one generated using Density Functional Theory (DFT) optimized interface structure, it was found that the Gd2O3 layers were terminated at the Gd atoms in the interface. (C) 2019 Elsevier B.V. All rights reserved.
机译：异质结构界面在定义薄膜装置的性能方面发挥了重要作用。高k介电氧化物半导体异质结构被广泛地研究了未来集成电路的承诺候选者，因此在技术进步的原子规模处精确探测界面变得重要。在这项工作中，使用从一组焦点系列高分辨率透射电子显微镜（HRTEM）图像重建的复值出的出口波，在原子尺度上表征了高k介电氧化物（GD2O3）-SEMI导体（GE）界面没有客观镜头球形像差校正获得。该表征的复杂性在于在离子铣削期间去除由沉积在成像区域上的非晶层产生的图像伪影，其使用算法在最近开发的非晶背景上成功解决。最终结果表明，本研究的界面是原子锋利和平坦的。估计沿着观察方向的成像区域的厚度从信道图层估计。将实验数据的重建幅度与使用密度函数理论（DFT）优化的界面结构产生的模拟幅度的重建幅度，发现GD2O3层在界面中的GD原子处终止。 （c）2019 Elsevier B.v.保留所有权利。

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