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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >How Cu doping improves the interfacial wettability between Ag and SnO2 of Ag/SnO2 contact material
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How Cu doping improves the interfacial wettability between Ag and SnO2 of Ag/SnO2 contact material

机译：Cu掺杂如何改善Ag / SnO2接触材料的AG和SnO2之间的界面润湿性

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In order to explore how Cu doping improves the wettability between Ag and SnO2 of Ag/SnO2 contact material, the physical and chemical changes of pure SnO2 and Cu-doped SnO2 powders at a high temperature were studied using a laser simulated arc. The results show that some of the SnO2 grows preferentially along the (211) and (101) crystal planes, and the other part changes to SnO preferentially growing along the (101) crystal plane. SnO2 particles with SnO make contact with each other under the action of the simulation arc to form large agglomerate particles. Meanwhile, the deposition of gasified SnO2 during the arc process aggravates the formation of SnO2 agglomerates. However, Cu doping reduces the gasified deposition of SnO2 during the arc process, and inhibits the preferred growth of SnO2 along the (211) and (101) crystal planes and the change from SnO2 to SnO at a high temperature. Furthermore, Cu doping induces SnO2 grains to redistribute along a specific direction to form nanoneedle assembled Cu-doped SnO2 hierarchical nanostructures during the arc process. Finally, a mechanism of Cu doping which improves the interfacial wettability between Ag and SnO2 of Ag/SnO2 contact material is proposed. (C) 2019 Elsevier B.V. All rights reserved.
机译：为了探讨Cu掺杂如何改善Ag / SnO2接触材料的Ag和SnO2之间的润湿性，使用激光模拟电弧研究了高温下纯SnO2和Cu掺杂的SnO2粉末的物理和化学变化。结果表明，一些SnO2优选地沿（211）和（101）晶平，另一部分改变为优先沿（101）晶体平面的SnO。 SnO2颗粒与SnO在模拟电弧的作用下彼此接触以形成大的聚集颗粒。同时，在电弧过程中的气化SnO2的沉积加剧了SnO 2附聚物的形成。然而，Cu掺杂在电弧过程中降低了SnO2的气化沉积，并且在高温下抑制沿（211）和（101）和（101）晶平的SnO2的优选生长，并且在高温下从SnO2到SnO的变化。此外，Cu掺杂诱导SnO 2晶粒沿着特定方向重新分配，以在电弧过程中形成纳米掺杂的Cu掺杂的SnO2分子纳米结构。最后，提出了提高了Cu掺杂的机制，其改善了Ag / SnO2接触材料的Ag和SnO2之间的界面润湿性。 （c）2019 Elsevier B.v.保留所有权利。

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