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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Red emission generation in Ce3+/Mn2+ co-doping Y3Al5O12 phosphor ceramics for warm white lighting emitting diodes
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Red emission generation in Ce3+/Mn2+ co-doping Y3Al5O12 phosphor ceramics for warm white lighting emitting diodes

机译：CE3 + / MN2 +共掺杂Y3AL5O12磷光体陶瓷中的红色发射发电，用于暖白色照明发射二极管

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摘要

Y3Al5O12:Ce3+/Mn2+/Si4+ phosphor ceramics were fabricated by solid state reaction. Red emission is obtained, which is attributed to the Mn2+: T-4(1) -> (6)A(1) spin-forbidden transition under the excitation of 450 nm via the efficient energy transfer from Ce3+ to Mn2+.The green emission (535 nm) originating from Ce3+ and the orange emission (587 nm) from Mn2+ ions were observed. Mn2+ ions are more inclined to occupy Al3+ octahedral sites and the Si4+ ions locate in the Al3+ tetrahedral sites and their codoping is for charge compensation. The red emission component in Ce3+/Mn2+/Si4+ doping YAG phosphor ceramics is significant for obtaining warm white lighting upon increasing Mn2+ concentration under 450 nm excitation. White light emitting diodes were successfully constructed by combining the fabricated ceramics with the GaN blue chips. (C) 2019 Elsevier B.V. All rights reserved.
机译：Y3Al5O12：CE3 + / MN2 + / Si4 +荧光粉陶瓷通过固态反应制造。 获得红色发射，其归因于Mn2 +：T-4（1） - >（6）A（1）通过从Ce3 +至Mn2 +的有效能量转移的激发下的激发禁止过渡。绿色排放 观察到来自CE3 +的535nm）和来自MN2 +离子的橙色发射（587nm）。 Mn2 +离子更倾向于占据Al3 +八面体位点，并且Si4 +离子位于Al3 +四面体位点，它们的编码是用于电荷补偿。 CE3 + / MN2 + / Si4 +掺杂YAG磷光体陶瓷中的红色发射组分对于在450nm激发下增加Mn2 +浓度时获得暖白光。 通过将制造的陶瓷与GaN蓝芯片组合来成功构建白光发光二极管。 （c）2019 Elsevier B.v.保留所有权利。

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  • 作者

    Ao Gang; Tang Yanru; Yi Xuezhuan; Tian Yanna; Chen Jie; Hao Deming; Lin Yandan; Zhou Shengming;

  • 作者单位

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

    Fudan Univ Sch Informat Sci &

    Technol Inst Elect Light Sources Dept Illuminat Engn &

    Light Sources Shanghai 200433 Peoples R China;

    Chinese Acad Sci Shanghai Inst Opt &

    Fine Mech Lab Micronano Optoelect Mat &

    Devices Key Lab Mat High Power Laser Shanghai 201800 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 合金学与各种性质合金;金属材料;
  • 关键词

    WLED; YAG:Ce3+/Mn2+/Si4+; CRI; Ceramics;

    机译：WLED;YAG：CE3 + / MN2 + / SI4 +;CRI;陶瓷;

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