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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Interface assisted high magnetoresistance in BiFeO3/Fe97Si3 thin film at room temperature
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Interface assisted high magnetoresistance in BiFeO3/Fe97Si3 thin film at room temperature

机译：界面在室温下辅助BifeO3 / Fe97SI3薄膜的高磁阻

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摘要

Bilayer thin films of multiferroic oxide BiFeO3 and metallic alloy Fe97Si3 deposited by RF-magnetron sputtering have been investigated to understand spin polarized electron transport across bilayer interface. Effect of BiFeO3 thickness variation on magnetic and magnetotransport properties of bilayer thin films has been analyzed. An induced unidirectional magnetic anisotropy in bilayer thin films has been observed by interface coupling between antiferromagnetic BiFeO3 and ferromagnetic Fe97Si3 spin magnetic moments. Increasing interface roughness with increase in BiFeO3 film thickness has been found to be a regulatory factor for inducing in-plane unidirectional anisotropy and exchange interaction at bilayer interface. A high magnetic moment similar to 315 emu/cc originated at room temperature by uncompensated interface spin density has been measured in 30 nm thick BiFeO3 film. Magnetic inhomogeneities at interface give rise to a spin glass like phase responsible for spin flip scattering at bilayer interface. Enhanced low field magnetoresistance similar to 30% in 60 nm thick BiFeO3 film is ascribed to intensified scattering from disordered interface states with increasing BiFeO3 thickness. Magnetodielectric measurements (applied magnetic field 1 kOe) have revealed five times increase in relaxation time of charge carriers inside grains confirming intergrain charge transport dominated by alignment of magnetic moments of nearby grains via exchange coupling. High value of magnetoresistance similar to 46% in 60 nm thick film of increased grain size is due to enhanced critical length for charge transport. Observed room temperature magnetoresistive properties of BiFeO3/Fe97Si3 thin films are critical for developing multiferroic antiferromagnetic based spintronic devices. (C) 2019 Published by Elsevier B.V.
机译：已经研究了通过RF-磁控溅射沉积的多体氧化物BifeO3和金属合金Fe97SI3的双层薄膜，以了解双层界面的自旋极化电子传输。分析了BIFEO3厚度变化对双层薄膜磁性和磁传输性能的影响。通过反铁磁性BifeO3和铁磁FE97SI3旋转磁矩的界面耦合，观察到双层薄膜中的诱导的单向磁各向异性。已经发现增加界面粗糙度随着BIFEO3薄膜厚度的增加，是在双层界面处诱导面内单向各向异性和交换相互作用的调节因素。在30nm厚的BifeO3薄膜中测量了30 nm厚的界面，类似于室温的高磁矩。界面处的磁性不均匀性产生旋转玻璃，如双层界面处的旋转散射的相位相位。增强的低现场磁阻与60nm厚的BifeO3薄膜中的30％相似，归因于从无序的界面状态的增强散射，增加BifeO3厚度。磁电测量（施加的磁场1koe）揭示了在通过交换耦合的磁矩对准的磁性矩对导地支配的晶粒内部的磁性载体的放松时间增加了五倍。磁阻的高值类似于60nm厚的粒度的厚膜中的46％是由于增强的电荷传输的临界长度。观测到的BifeO3 / Fe97Si3薄膜的室温磁阻属性对于开发基于多用石反铁磁体的旋转型器件至关重要。 （c）2019年由elestvier b.v发布。

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