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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Tuning the polarization rotation behavior in undoped zinc oxide thin films
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Tuning the polarization rotation behavior in undoped zinc oxide thin films

机译：调整未掺杂的氧化锌薄膜中的偏振旋转行为

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摘要

The control of polarization rotation (PR) is a key issue of applying undoped zinc oxide (ZnO) as information storage devices. A systematic study of ZnO thin films by conducting piezoresponse force microscopy (PFM) technique on samples with different electrodes, film thicknesses, and deposition oxygen partial pressures, P-O2 allows disclosing the possible factors those affecting the PR behavior. The results clearly indicate that higher work function conductive material, such as Pt, is a promising candidature as the top electrode and bottom electrode to ensure the PR occur and maintain in ZnO films. From the effects of film thickness study, PR behavior can be observed in film downscaled to 15 nm. However, in order to avoid current leakage and maintain the rotated polarization state, thicker film with about 240 nm is preferred. In addition, in the film deposited with a low P-O2 (>5 x 10(-6) Torr), more atomic point defects such as oxygen vacancy may lead the sample into a large leakage current and deteriorate the PR behavior. Hence, by this systematic study, it is proved that the PR behavior of undoped ZnO thin films can be optimized with proper deposition parameters. (C) 2019 Elsevier B.V. All rights reserved.
机译：偏振旋转（PR）的控制是应用未掺杂的氧化锌（ZnO）作为信息存储设备的关键问题。通过对具有不同电极，膜厚度和沉积氧数压力的样品进行压电响应力显微镜（PFM）技术对ZnO薄膜进行系统研究，P-O2允许公开影响PR行为的可能因素。结果清楚地表明，较高的工作函数导电材料，例如Pt，是作为顶电极和底部电极的有希望的候选，以确保PR发生并在ZnO膜中保持和维持。从薄膜厚度研究的影响，可以在缩小到15nm的薄膜中观察PR行为。然而，为了避免电流泄漏并保持旋转偏振状态，优选具有约240nm的较厚膜。另外，在沉积有低p-O2（> 5×10（-6）托）的膜中，诸如氧空位的更多原子点缺陷可以将样品引导到大的漏电流中并使PR行为劣化。因此，通过该系统研究，证明了未掺杂的ZnO薄膜的PR行为可以用适当的沉积参数进行优化。 （c）2019 Elsevier B.v.保留所有权利。

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