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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Dopant-free random inverted nanopyramid ultrathin c-Si solar cell via low work function metal modified ITO and TiO2 electron transporting layer
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Dopant-free random inverted nanopyramid ultrathin c-Si solar cell via low work function metal modified ITO and TiO2 electron transporting layer

机译：无掺杂剂随机倒置纳米甲酰胺超薄C-Si太阳能电池通过低功函数金属改性ITO和TiO2电子传输层

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摘要

Ultrathin c-Si solar cells with light trapping nanostructures attract tremendous research interest for their flexibility and high specific power density. However, the performance of the ultrathin c-Si solar cell is limited by a big light absorption loss due to the reduced thickness. Here, we report a novel ultrathin c-Si solar cell through the direct deposition of TiO2 electron transporting layer and indium tin oxide (ITO) electrode modified with ultrathin low workfunction (WF) metal subsequently onto random inverted nanopyramids (INPs) texture. The random INPs are fabricated through the well-known two-step Ag assisted chemical etching method followed by a post nanostructure rebuilding process. The TiO2 thickness, deposition temperature and metal layer thickness are changed to optimize cell performance. With the optimized parameters, a high short-current density (Jsc) (30.66 mA/cm(2)) and energy-conversion efficiency (11.36%) are achieved on random INPs based 45 mu m ultrathin c-Si solar cell by choosing 2 nmMg layer as the modifying ultrathin metal layer, which are 37.65% and 36.4% respectively higher than that in planar one. All the findings not only offer additional insight into the mechanism of TiO2 electron transporting layer based ultrathin c-Si solar cell but also introduce a promising new approach for next-generation cost effective flexible photovoltaics. (C) 2018 Elsevier B.V. All rights reserved.
机译：超薄的c-Si太阳能电池的光俘获纳米结构吸引它们的灵活性和高比功率密度极大的研究兴趣。然而，超薄的c-Si太阳能电池的性能是由一个大的光吸收损失，由于减小的厚度的限制。在这里，我们通过二氧化钛的电子传输层，并用超薄的低功函数（WF）的金属改性的氧化铟锡（ITO）电极的直接沉积报告一个新的超薄的c-Si太阳能电池上随后随机反相纳米锥体（综合邻舍）织构。随机综合邻舍通过公知的两步银辅助化学蚀刻法，随后通过后纳米结构重建工艺制造。在TiO 2的厚度，沉积温度和金属层厚度被改变，以优化电池性能。用优化参数，一个高短路电流密度（Jsc）（30.66毫安/厘米（2））和能量转换效率（11.36％）是基于45微米通过选择2超薄的c-Si太阳能电池上随机综合邻舍实现nmMg层作为改性超薄金属层，其比在一个平面分别是较高的37.65％和36.4％。所有这些发现不仅提供额外洞察的TiO 2电子传输层的基于超薄的c-Si太阳能电池的机构，而且引入下一代成本效益的柔性光伏有希望的新方法。 （c）2018年elestvier b.v.保留所有权利。

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