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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Electrode effect regulated resistance switching and selector characteristics in Nb doped SrTiO3 single crystal for potential cross-point memory applications
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Electrode effect regulated resistance switching and selector characteristics in Nb doped SrTiO3 single crystal for potential cross-point memory applications

机译：电极效应NB掺杂SRTIO3单晶中的电极效应电阻电阻切换和选择器特性，用于潜在的交叉点存储器应用

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摘要

Current-voltage characteristics of Nb doped SrTiO3 single crystals are detected at room temperatures. Results reveal that modifications of electrode configurations play a significant role on current-voltage behaviors. The asymmetric selector characteristics and symmetrical selector behaviors are the first reported in Nb doped SrTiO3 single crystals, which can be controlled by changing electrode configurations. A new model of Ag nanofilament can explain selector characteristics. Ohmic and space charge limited current mechanisms controlled typical resistance switching behaviors with good cyclic properties are also observed. Schottky barrier electrical conduction mechanism related typical diode behaviors are observed, while voltage is applied on same top electrodes Au. (C) 2017 Elsevier B.V. All rights reserved.
机译：在室温下检测Nb掺杂SRTIO3单晶的电流 - 电压特性。 结果表明，电极配置的修改在电流电压行为上发挥着重要作用。 不对称选择器特性和对称选择器行为是在Nb掺杂SRTIO3单晶中的第一次报道，其可以通过改变电极配置来控制。 一种新型Ag纳米丝模型可以解释选择器特性。 欧姆和空间电荷有限电流机制也观察到具有良好循环性质的典型电阻切换行为。 肖特基势垒电导机构相关相关的典型二极管行为，而电压在相同的顶部电极Au上施加。 （c）2017年Elsevier B.V.保留所有权利。

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